Stark tuning of donor electron spins in silicon

F. R. Bradbury, Alexei M. Tyryshkin, Guillaume Sabouret, Jeff Bokor, Thomas Schenkel, S. A. Lyon

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

We report Stark shift measurements for 121Sb donor electron spins in silicon using pulse electron spin resonance. Interdigitated metal gates on a Sb-implanted 28Si epi-layer are used to apply the electric fields. Two quadratic Stark effects are resolved: a decrease of the hyperfine coupling between electron and nuclear spins of the donor and a decrease in electron Zeeman g-factor. A significant linear Stark effect is also observed, which we suggest arises from strain. We discuss the results in the context of the Kane model quantum computer.

Original languageEnglish (US)
Title of host publicationPhysics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B
Pages1093-1094
Number of pages2
DOIs
StatePublished - 2007
Event28th International Conference on the Physics of Semiconductors, ICPS 2006 - Vienna, Austria
Duration: Jul 24 2006Jul 28 2006

Publication series

NameAIP Conference Proceedings
Volume893
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

Other28th International Conference on the Physics of Semiconductors, ICPS 2006
CountryAustria
CityVienna
Period7/24/067/28/06

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Keywords

  • Donors
  • Electron spin resonance
  • Quantum computing
  • Silicon
  • Stark effect

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    Bradbury, F. R., Tyryshkin, A. M., Sabouret, G., Bokor, J., Schenkel, T., & Lyon, S. A. (2007). Stark tuning of donor electron spins in silicon. In Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B (pp. 1093-1094). (AIP Conference Proceedings; Vol. 893). https://doi.org/10.1063/1.2730277