@inproceedings{e5ce6b91b70143fc9f2fcba86c964b0e,
title = "Stark tuning of donor electron spins in silicon",
abstract = "We report Stark shift measurements for 121Sb donor electron spins in silicon using pulse electron spin resonance. Interdigitated metal gates on a Sb-implanted 28Si epi-layer are used to apply the electric fields. Two quadratic Stark effects are resolved: a decrease of the hyperfine coupling between electron and nuclear spins of the donor and a decrease in electron Zeeman g-factor. A significant linear Stark effect is also observed, which we suggest arises from strain. We discuss the results in the context of the Kane model quantum computer.",
keywords = "Donors, Electron spin resonance, Quantum computing, Silicon, Stark effect",
author = "Bradbury, {F. R.} and Tyryshkin, {Alexei M.} and Guillaume Sabouret and Jeff Bokor and Thomas Schenkel and Lyon, {S. A.}",
year = "2007",
doi = "10.1063/1.2730277",
language = "English (US)",
isbn = "9780735403970",
series = "AIP Conference Proceedings",
pages = "1093--1094",
booktitle = "Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B",
note = "28th International Conference on the Physics of Semiconductors, ICPS 2006 ; Conference date: 24-07-2006 Through 28-07-2006",
}