Stark tuning of donor electron spins in silicon

F. R. Bradbury, A. M. Tyryshkin, Guillaume Sabouret, Jeff Bokor, Thomas Schenkel, S. A. Lyon

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Abstract

We report Stark shift measurements for Sb121 donor electron spins in silicon using pulsed electron spin resonance. Interdigitated metal gates on a Sb-implanted Si28 epilayer are used to apply the electric fields. Two quadratic Stark effects are resolved: a decrease of the hyperfine coupling between electron and nuclear spins of the donor and a decrease in electron Zeeman g factor. The hyperfine term prevails at magnetic fields of 0.35 T, while the g factor term is expected to dominate at higher magnetic fields. We discuss the results in the context of the Kane model quantum computer.

Original languageEnglish (US)
Article number176404
JournalPhysical review letters
Volume97
Issue number17
DOIs
StatePublished - 2006

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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    Bradbury, F. R., Tyryshkin, A. M., Sabouret, G., Bokor, J., Schenkel, T., & Lyon, S. A. (2006). Stark tuning of donor electron spins in silicon. Physical review letters, 97(17), [176404]. https://doi.org/10.1103/PhysRevLett.97.176404