Stark tuning of donor electron spins in silicon

F. R. Bradbury; A. M. Tyryshkin; Guillaume Sabouret; Jeff Bokor; Thomas Schenkel; S. A. Lyon

doi:10.1103/PhysRevLett.97.176404

Stark tuning of donor electron spins in silicon

F. R. Bradbury, A. M. Tyryshkin, Guillaume Sabouret, Jeff Bokor, Thomas Schenkel, S. A. Lyon

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66 Scopus citations

Abstract

We report Stark shift measurements for Sb121 donor electron spins in silicon using pulsed electron spin resonance. Interdigitated metal gates on a Sb-implanted Si28 epilayer are used to apply the electric fields. Two quadratic Stark effects are resolved: a decrease of the hyperfine coupling between electron and nuclear spins of the donor and a decrease in electron Zeeman g factor. The hyperfine term prevails at magnetic fields of 0.35 T, while the g factor term is expected to dominate at higher magnetic fields. We discuss the results in the context of the Kane model quantum computer.

Original language	English (US)
Article number	176404
Journal	Physical review letters
Volume	97
Issue number	17
DOIs	https://doi.org/10.1103/PhysRevLett.97.176404
State	Published - 2006

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1103/PhysRevLett.97.176404

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abstract = "We report Stark shift measurements for Sb121 donor electron spins in silicon using pulsed electron spin resonance. Interdigitated metal gates on a Sb-implanted Si28 epilayer are used to apply the electric fields. Two quadratic Stark effects are resolved: a decrease of the hyperfine coupling between electron and nuclear spins of the donor and a decrease in electron Zeeman g factor. The hyperfine term prevails at magnetic fields of 0.35 T, while the g factor term is expected to dominate at higher magnetic fields. We discuss the results in the context of the Kane model quantum computer.",

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AU - Bradbury, F. R.

AU - Tyryshkin, A. M.

AU - Sabouret, Guillaume

AU - Bokor, Jeff

AU - Schenkel, Thomas

AU - Lyon, S. A.

PY - 2006

Y1 - 2006

N2 - We report Stark shift measurements for Sb121 donor electron spins in silicon using pulsed electron spin resonance. Interdigitated metal gates on a Sb-implanted Si28 epilayer are used to apply the electric fields. Two quadratic Stark effects are resolved: a decrease of the hyperfine coupling between electron and nuclear spins of the donor and a decrease in electron Zeeman g factor. The hyperfine term prevails at magnetic fields of 0.35 T, while the g factor term is expected to dominate at higher magnetic fields. We discuss the results in the context of the Kane model quantum computer.

AB - We report Stark shift measurements for Sb121 donor electron spins in silicon using pulsed electron spin resonance. Interdigitated metal gates on a Sb-implanted Si28 epilayer are used to apply the electric fields. Two quadratic Stark effects are resolved: a decrease of the hyperfine coupling between electron and nuclear spins of the donor and a decrease in electron Zeeman g factor. The hyperfine term prevails at magnetic fields of 0.35 T, while the g factor term is expected to dominate at higher magnetic fields. We discuss the results in the context of the Kane model quantum computer.

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VL - 97

JO - Physical review letters

JF - Physical review letters

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Stark tuning of donor electron spins in silicon

Abstract

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