Stark shift and field ionization of arsenic donors in 28Si- silicon-on-insulator structures

C. C. Lo; S. Simmons; R. Lo Nardo; C. D. Weis; A. M. Tyryshkin; J. Meijer; D. Rogalla; S. A. Lyon; J. Bokor; T. Schenkel; J. J.L. Morton

doi:10.1063/1.4876175

Stark shift and field ionization of arsenic donors in ²⁸Si- silicon-on-insulator structures

C. C. Lo, S. Simmons, R. Lo Nardo, C. D. Weis, A. M. Tyryshkin, J. Meijer, D. Rogalla, S. A. Lyon, J. Bokor, T. Schenkel, J. J.L. Morton

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17 Scopus citations

Abstract

We develop an efficient back gate for silicon-on-insulator (SOI) devices operating at cryogenic temperatures and measure the quadratic hyperfine Stark shift parameter of arsenic donors in isotopically purified ²⁸Si-SOI layers using such structures. The back gate is implemented using MeV ion implantation through the SOI layer forming a metallic electrode in the handle wafer, enabling large and uniform electric fields up to 2 V/μm to be applied across the SOI layer. Utilizing this structure, we measure the Stark shift parameters of arsenic donors embedded in the ²⁸Si-SOI layer and find a contact hyperfine Stark parameter of η_a =-1.9 ± 0.7 × 10^-3μm²/V². We also demonstrate electric-field driven dopant ionization in the SOI device layer, measured by electron spin resonance.

Original language	English (US)
Article number	193502
Journal	Applied Physics Letters
Volume	104
Issue number	19
DOIs	https://doi.org/10.1063/1.4876175
State	Published - May 12 2014

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.4876175

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title = "Stark shift and field ionization of arsenic donors in 28Si- silicon-on-insulator structures",

abstract = "We develop an efficient back gate for silicon-on-insulator (SOI) devices operating at cryogenic temperatures and measure the quadratic hyperfine Stark shift parameter of arsenic donors in isotopically purified 28Si-SOI layers using such structures. The back gate is implemented using MeV ion implantation through the SOI layer forming a metallic electrode in the handle wafer, enabling large and uniform electric fields up to 2 V/μm to be applied across the SOI layer. Utilizing this structure, we measure the Stark shift parameters of arsenic donors embedded in the 28Si-SOI layer and find a contact hyperfine Stark parameter of ηa =-1.9 ± 0.7 × 10-3μm2/V2. We also demonstrate electric-field driven dopant ionization in the SOI device layer, measured by electron spin resonance.",

author = "Lo, {C. C.} and S. Simmons and {Lo Nardo}, R. and Weis, {C. D.} and Tyryshkin, {A. M.} and J. Meijer and D. Rogalla and Lyon, {S. A.} and J. Bokor and T. Schenkel and Morton, {J. J.L.}",

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day = "12",

doi = "10.1063/1.4876175",

language = "English (US)",

volume = "104",

journal = "Applied Physics Letters",

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TY - JOUR

T1 - Stark shift and field ionization of arsenic donors in 28Si- silicon-on-insulator structures

AU - Lo, C. C.

AU - Simmons, S.

AU - Lo Nardo, R.

AU - Weis, C. D.

AU - Tyryshkin, A. M.

AU - Meijer, J.

AU - Rogalla, D.

AU - Lyon, S. A.

AU - Bokor, J.

AU - Schenkel, T.

AU - Morton, J. J.L.

PY - 2014/5/12

Y1 - 2014/5/12

N2 - We develop an efficient back gate for silicon-on-insulator (SOI) devices operating at cryogenic temperatures and measure the quadratic hyperfine Stark shift parameter of arsenic donors in isotopically purified 28Si-SOI layers using such structures. The back gate is implemented using MeV ion implantation through the SOI layer forming a metallic electrode in the handle wafer, enabling large and uniform electric fields up to 2 V/μm to be applied across the SOI layer. Utilizing this structure, we measure the Stark shift parameters of arsenic donors embedded in the 28Si-SOI layer and find a contact hyperfine Stark parameter of ηa =-1.9 ± 0.7 × 10-3μm2/V2. We also demonstrate electric-field driven dopant ionization in the SOI device layer, measured by electron spin resonance.

AB - We develop an efficient back gate for silicon-on-insulator (SOI) devices operating at cryogenic temperatures and measure the quadratic hyperfine Stark shift parameter of arsenic donors in isotopically purified 28Si-SOI layers using such structures. The back gate is implemented using MeV ion implantation through the SOI layer forming a metallic electrode in the handle wafer, enabling large and uniform electric fields up to 2 V/μm to be applied across the SOI layer. Utilizing this structure, we measure the Stark shift parameters of arsenic donors embedded in the 28Si-SOI layer and find a contact hyperfine Stark parameter of ηa =-1.9 ± 0.7 × 10-3μm2/V2. We also demonstrate electric-field driven dopant ionization in the SOI device layer, measured by electron spin resonance.

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DO - 10.1063/1.4876175

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JF - Applied Physics Letters

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ER -

Stark shift and field ionization of arsenic donors in ²⁸Si- silicon-on-insulator structures

Abstract

All Science Journal Classification (ASJC) codes

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