Stark shift and field ionization of arsenic donors in 28Si- silicon-on-insulator structures

C. C. Lo, S. Simmons, R. Lo Nardo, C. D. Weis, A. M. Tyryshkin, J. Meijer, D. Rogalla, S. A. Lyon, J. Bokor, T. Schenkel, J. J.L. Morton

Research output: Contribution to journalArticlepeer-review

16 Scopus citations


We develop an efficient back gate for silicon-on-insulator (SOI) devices operating at cryogenic temperatures and measure the quadratic hyperfine Stark shift parameter of arsenic donors in isotopically purified 28Si-SOI layers using such structures. The back gate is implemented using MeV ion implantation through the SOI layer forming a metallic electrode in the handle wafer, enabling large and uniform electric fields up to 2 V/μm to be applied across the SOI layer. Utilizing this structure, we measure the Stark shift parameters of arsenic donors embedded in the 28Si-SOI layer and find a contact hyperfine Stark parameter of ηa =-1.9 ± 0.7 × 10-3μm2/V2. We also demonstrate electric-field driven dopant ionization in the SOI device layer, measured by electron spin resonance.

Original languageEnglish (US)
Article number193502
JournalApplied Physics Letters
Issue number19
StatePublished - May 12 2014

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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