Stark shift and field ionization of arsenic donors in 28Si- silicon-on-insulator structures

C. C. Lo, S. Simmons, R. Lo Nardo, C. D. Weis, A. M. Tyryshkin, J. Meijer, D. Rogalla, S. A. Lyon, J. Bokor, T. Schenkel, J. J.L. Morton

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13 Scopus citations

Abstract

We develop an efficient back gate for silicon-on-insulator (SOI) devices operating at cryogenic temperatures and measure the quadratic hyperfine Stark shift parameter of arsenic donors in isotopically purified 28Si-SOI layers using such structures. The back gate is implemented using MeV ion implantation through the SOI layer forming a metallic electrode in the handle wafer, enabling large and uniform electric fields up to 2 V/μm to be applied across the SOI layer. Utilizing this structure, we measure the Stark shift parameters of arsenic donors embedded in the 28Si-SOI layer and find a contact hyperfine Stark parameter of ηa =-1.9 ± 0.7 × 10-3μm2/V2. We also demonstrate electric-field driven dopant ionization in the SOI device layer, measured by electron spin resonance.

Original languageEnglish (US)
Article number193502
JournalApplied Physics Letters
Volume104
Issue number19
DOIs
StatePublished - May 12 2014

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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