Abstract
Electroreflectance measurements have been carried out in order to investigate Stark-ladder transitions in a GaAs(40 Å)/AlGaAs(20 Å) superlattice under various uniform electric fields, and compared with the transition energies calculated on the basis of a microscopic tight-binding description. The observed electroreflectance spectra in a wide range of energies (1.5-2.2 eV) shift in proportion to an applied electric field. The signals in the higher photon energy region (1.9-2.2 eV) indicate an existence of the transition from the spin-orbit split-off band in the valence band to the Wannier-Stark localization states in the conduction band. The assignment is supported by the tight-binding calculation. The resonant couplings of the localized states are also observed.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 839-842 |
| Number of pages | 4 |
| Journal | Solid State Electronics |
| Volume | 37 |
| Issue number | 4-6 |
| DOIs | |
| State | Published - 1994 |
| Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry