Stark-ladder transitions in GaAs/AlGaAs superlattices

M. Yamaguchi; M. Morifuji; H. Kubo; K. Taniguchi; C. Hamaguchi; C. Gmachl; E. Gornik

doi:10.1016/0038-1101(94)90309-3

Stark-ladder transitions in GaAs/AlGaAs superlattices

M. Yamaguchi, M. Morifuji, H. Kubo, K. Taniguchi, C. Hamaguchi, C. Gmachl, E. Gornik

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14 Scopus citations

Abstract

Electroreflectance measurements have been carried out in order to investigate Stark-ladder transitions in a GaAs(40 Å)/AlGaAs(20 Å) superlattice under various uniform electric fields, and compared with the transition energies calculated on the basis of a microscopic tight-binding description. The observed electroreflectance spectra in a wide range of energies (1.5-2.2 eV) shift in proportion to an applied electric field. The signals in the higher photon energy region (1.9-2.2 eV) indicate an existence of the transition from the spin-orbit split-off band in the valence band to the Wannier-Stark localization states in the conduction band. The assignment is supported by the tight-binding calculation. The resonant couplings of the localized states are also observed.

Original language	English (US)
Pages (from-to)	839-842
Number of pages	4
Journal	Solid State Electronics
Volume	37
Issue number	4-6
DOIs	https://doi.org/10.1016/0038-1101(94)90309-3
State	Published - 1994
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/0038-1101(94)90309-3

Cite this

@article{3346b1cf492e420aaea604f444554d2c,

title = "Stark-ladder transitions in GaAs/AlGaAs superlattices",

abstract = "Electroreflectance measurements have been carried out in order to investigate Stark-ladder transitions in a GaAs(40 {\AA})/AlGaAs(20 {\AA}) superlattice under various uniform electric fields, and compared with the transition energies calculated on the basis of a microscopic tight-binding description. The observed electroreflectance spectra in a wide range of energies (1.5-2.2 eV) shift in proportion to an applied electric field. The signals in the higher photon energy region (1.9-2.2 eV) indicate an existence of the transition from the spin-orbit split-off band in the valence band to the Wannier-Stark localization states in the conduction band. The assignment is supported by the tight-binding calculation. The resonant couplings of the localized states are also observed.",

author = "M. Yamaguchi and M. Morifuji and H. Kubo and K. Taniguchi and C. Hamaguchi and C. Gmachl and E. Gornik",

year = "1994",

doi = "10.1016/0038-1101(94)90309-3",

language = "English (US)",

volume = "37",

pages = "839--842",

journal = "Solid State Electronics",

issn = "0038-1101",

publisher = "Elsevier Limited",

number = "4-6",

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TY - JOUR

T1 - Stark-ladder transitions in GaAs/AlGaAs superlattices

AU - Yamaguchi, M.

AU - Morifuji, M.

AU - Kubo, H.

AU - Taniguchi, K.

AU - Hamaguchi, C.

AU - Gmachl, C.

AU - Gornik, E.

PY - 1994

Y1 - 1994

N2 - Electroreflectance measurements have been carried out in order to investigate Stark-ladder transitions in a GaAs(40 Å)/AlGaAs(20 Å) superlattice under various uniform electric fields, and compared with the transition energies calculated on the basis of a microscopic tight-binding description. The observed electroreflectance spectra in a wide range of energies (1.5-2.2 eV) shift in proportion to an applied electric field. The signals in the higher photon energy region (1.9-2.2 eV) indicate an existence of the transition from the spin-orbit split-off band in the valence band to the Wannier-Stark localization states in the conduction band. The assignment is supported by the tight-binding calculation. The resonant couplings of the localized states are also observed.

AB - Electroreflectance measurements have been carried out in order to investigate Stark-ladder transitions in a GaAs(40 Å)/AlGaAs(20 Å) superlattice under various uniform electric fields, and compared with the transition energies calculated on the basis of a microscopic tight-binding description. The observed electroreflectance spectra in a wide range of energies (1.5-2.2 eV) shift in proportion to an applied electric field. The signals in the higher photon energy region (1.9-2.2 eV) indicate an existence of the transition from the spin-orbit split-off band in the valence band to the Wannier-Stark localization states in the conduction band. The assignment is supported by the tight-binding calculation. The resonant couplings of the localized states are also observed.

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EP - 842

JO - Solid State Electronics

JF - Solid State Electronics

IS - 4-6

ER -

Stark-ladder transitions in GaAs/AlGaAs superlattices

Abstract

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