Stark-ladder transitions in GaAs/AlGaAs superlattices

M. Yamaguchi, M. Morifuji, H. Kubo, K. Taniguchi, C. Hamaguchi, C. Gmachl, E. Gornik

Research output: Contribution to journalArticle

12 Scopus citations

Abstract

Electroreflectance measurements have been carried out in order to investigate Stark-ladder transitions in a GaAs(40 Å)/AlGaAs(20 Å) superlattice under various uniform electric fields, and compared with the transition energies calculated on the basis of a microscopic tight-binding description. The observed electroreflectance spectra in a wide range of energies (1.5-2.2 eV) shift in proportion to an applied electric field. The signals in the higher photon energy region (1.9-2.2 eV) indicate an existence of the transition from the spin-orbit split-off band in the valence band to the Wannier-Stark localization states in the conduction band. The assignment is supported by the tight-binding calculation. The resonant couplings of the localized states are also observed.

Original languageEnglish (US)
Pages (from-to)839-842
Number of pages4
JournalSolid State Electronics
Volume37
Issue number4-6
DOIs
StatePublished - 1994
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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    Yamaguchi, M., Morifuji, M., Kubo, H., Taniguchi, K., Hamaguchi, C., Gmachl, C., & Gornik, E. (1994). Stark-ladder transitions in GaAs/AlGaAs superlattices. Solid State Electronics, 37(4-6), 839-842. https://doi.org/10.1016/0038-1101(94)90309-3