Stark-ladder transition of GaAs/AlGaAs superlattices in high energy region

Masahito Yamaguchi, Masato Morifuji, Hitoshi Kubo, Kenji Taniguchi, Chihiro Hamaguchi, Claire Gmachl, Erich Gornik

Research output: Contribution to journalConference article

2 Scopus citations

Abstract

Electroreflectance and photocurrent measurements at low temperatures have been carried out in order to investigate Stark-ladder transitions in a GaAs(40Å)/AlGaAs(20Å) superlattice under various uniform electric fields, and compared with the transition energies calculated on the basis of a microscopic tight-binding description. The observed electroreflectance spectra in a wide range of energies (1.5eV-2.2eV) shift in proportion to an applied electric field. The signals in the higher photon energy region (1.9eV-2.2eV) indicate an existence of the transition from the spin-orbit split-off band in the valence band to the Wannier-Stark localization states in the conduction band. The assignment is supported by the tight-binding calculation.

Original languageEnglish (US)
Pages (from-to)608-617
Number of pages10
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume1985
DOIs
StatePublished - Jan 1 1993
Externally publishedYes
EventPhysical Concepts and Materials for Novel Optoelectronic Device Applications II 1993 - Trieste, Italy
Duration: May 23 1993May 28 1993

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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