Stark-ladder transition of GaAs/AlGaAs superlattices in high energy region

Masahito Yamaguchi; Masato Morifuji; Hitoshi Kubo; Kenji Taniguchi; Chihiro Hamaguchi; Claire Gmachl; Erich Gornik

doi:10.1117/12.162810

Stark-ladder transition of GaAs/AlGaAs superlattices in high energy region

Masahito Yamaguchi, Masato Morifuji, Hitoshi Kubo, Kenji Taniguchi, Chihiro Hamaguchi, Claire Gmachl, Erich Gornik

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

Electroreflectance and photocurrent measurements at low temperatures have been carried out in order to investigate Stark-ladder transitions in a GaAs(40Å)/AlGaAs(20Å) superlattice under various uniform electric fields, and compared with the transition energies calculated on the basis of a microscopic tight-binding description. The observed electroreflectance spectra in a wide range of energies (1.5eV-2.2eV) shift in proportion to an applied electric field. The signals in the higher photon energy region (1.9eV-2.2eV) indicate an existence of the transition from the spin-orbit split-off band in the valence band to the Wannier-Stark localization states in the conduction band. The assignment is supported by the tight-binding calculation.

Original language	English (US)
Pages (from-to)	608-617
Number of pages	10
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	1985
DOIs	https://doi.org/10.1117/12.162810
State	Published - 1993
Externally published	Yes
Event	Physical Concepts and Materials for Novel Optoelectronic Device Applications II 1993 - Trieste, Italy Duration: May 23 1993 → May 28 1993

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.162810

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title = "Stark-ladder transition of GaAs/AlGaAs superlattices in high energy region",

abstract = "Electroreflectance and photocurrent measurements at low temperatures have been carried out in order to investigate Stark-ladder transitions in a GaAs(40{\AA})/AlGaAs(20{\AA}) superlattice under various uniform electric fields, and compared with the transition energies calculated on the basis of a microscopic tight-binding description. The observed electroreflectance spectra in a wide range of energies (1.5eV-2.2eV) shift in proportion to an applied electric field. The signals in the higher photon energy region (1.9eV-2.2eV) indicate an existence of the transition from the spin-orbit split-off band in the valence band to the Wannier-Stark localization states in the conduction band. The assignment is supported by the tight-binding calculation.",

author = "Masahito Yamaguchi and Masato Morifuji and Hitoshi Kubo and Kenji Taniguchi and Chihiro Hamaguchi and Claire Gmachl and Erich Gornik",

note = "Publisher Copyright: {\textcopyright} 1993 SPIE. All rights reserved.; Physical Concepts and Materials for Novel Optoelectronic Device Applications II 1993 ; Conference date: 23-05-1993 Through 28-05-1993",

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doi = "10.1117/12.162810",

language = "English (US)",

volume = "1985",

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T1 - Stark-ladder transition of GaAs/AlGaAs superlattices in high energy region

AU - Yamaguchi, Masahito

AU - Morifuji, Masato

AU - Kubo, Hitoshi

AU - Taniguchi, Kenji

AU - Hamaguchi, Chihiro

AU - Gmachl, Claire

AU - Gornik, Erich

PY - 1993

Y1 - 1993

N2 - Electroreflectance and photocurrent measurements at low temperatures have been carried out in order to investigate Stark-ladder transitions in a GaAs(40Å)/AlGaAs(20Å) superlattice under various uniform electric fields, and compared with the transition energies calculated on the basis of a microscopic tight-binding description. The observed electroreflectance spectra in a wide range of energies (1.5eV-2.2eV) shift in proportion to an applied electric field. The signals in the higher photon energy region (1.9eV-2.2eV) indicate an existence of the transition from the spin-orbit split-off band in the valence band to the Wannier-Stark localization states in the conduction band. The assignment is supported by the tight-binding calculation.

AB - Electroreflectance and photocurrent measurements at low temperatures have been carried out in order to investigate Stark-ladder transitions in a GaAs(40Å)/AlGaAs(20Å) superlattice under various uniform electric fields, and compared with the transition energies calculated on the basis of a microscopic tight-binding description. The observed electroreflectance spectra in a wide range of energies (1.5eV-2.2eV) shift in proportion to an applied electric field. The signals in the higher photon energy region (1.9eV-2.2eV) indicate an existence of the transition from the spin-orbit split-off band in the valence band to the Wannier-Stark localization states in the conduction band. The assignment is supported by the tight-binding calculation.

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VL - 1985

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EP - 617

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Physical Concepts and Materials for Novel Optoelectronic Device Applications II 1993

Y2 - 23 May 1993 through 28 May 1993

ER -

Stark-ladder transition of GaAs/AlGaAs superlattices in high energy region

Abstract

All Science Journal Classification (ASJC) codes

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