Stark-ladder transition in a type-II (GaAs)8/(AlAs)8 superlattice

M. Yamaguchi, H. Nagasawa, M. Morifuji, K. Taniguchi, C. Hamaguchi, Claire F. Gmachl, E. Gornik

Research output: Contribution to journalArticle

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Abstract

The Stark-ladder transitions in a type-II (GaAs)8/(AlAs) 8 superlattice are investigated under various uniform electric fields by using electroreflectance spectroscopy. The electroreflectance spectra suggest the existence of a Stark-ladder transition from the heavy-hole state in the Gamma valence band to the electron state in the X conduction band. The Stark ladders of the X miniband show a strong mixing with the Gamma miniband. The experimental data from electroreflectance measurements are compared with a theoretical calculation based on the tight-binding method, and reasonable agreement is found.

Original languageEnglish (US)
Article number010
Pages (from-to)1810-1814
Number of pages5
JournalSemiconductor Science and Technology
Volume9
Issue number10
DOIs
StatePublished - 1994

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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    Yamaguchi, M., Nagasawa, H., Morifuji, M., Taniguchi, K., Hamaguchi, C., Gmachl, C. F., & Gornik, E. (1994). Stark-ladder transition in a type-II (GaAs)8/(AlAs)8 superlattice. Semiconductor Science and Technology, 9(10), 1810-1814. [010]. https://doi.org/10.1088/0268-1242/9/10/010