Stark-ladder transition in a type-II (GaAs)8/(AlAs)8 superlattice

M. Yamaguchi; H. Nagasawa; M. Morifuji; K. Taniguchi; C. Hamaguchi; Claire F. Gmachl; E. Gornik

doi:10.1088/0268-1242/9/10/010

Stark-ladder transition in a type-II (GaAs)₈/(AlAs)₈ superlattice

M. Yamaguchi, H. Nagasawa, M. Morifuji, K. Taniguchi, C. Hamaguchi, Claire F. Gmachl, E. Gornik

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6 Scopus citations

Abstract

The Stark-ladder transitions in a type-II (GaAs)₈/(AlAs) ₈ superlattice are investigated under various uniform electric fields by using electroreflectance spectroscopy. The electroreflectance spectra suggest the existence of a Stark-ladder transition from the heavy-hole state in the Gamma valence band to the electron state in the X conduction band. The Stark ladders of the X miniband show a strong mixing with the Gamma miniband. The experimental data from electroreflectance measurements are compared with a theoretical calculation based on the tight-binding method, and reasonable agreement is found.

Original language	English (US)
Article number	010
Pages (from-to)	1810-1814
Number of pages	5
Journal	Semiconductor Science and Technology
Volume	9
Issue number	10
DOIs	https://doi.org/10.1088/0268-1242/9/10/010
State	Published - 1994

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1088/0268-1242/9/10/010

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title = "Stark-ladder transition in a type-II (GaAs)8/(AlAs)8 superlattice",

abstract = "The Stark-ladder transitions in a type-II (GaAs)8/(AlAs) 8 superlattice are investigated under various uniform electric fields by using electroreflectance spectroscopy. The electroreflectance spectra suggest the existence of a Stark-ladder transition from the heavy-hole state in the Gamma valence band to the electron state in the X conduction band. The Stark ladders of the X miniband show a strong mixing with the Gamma miniband. The experimental data from electroreflectance measurements are compared with a theoretical calculation based on the tight-binding method, and reasonable agreement is found.",

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year = "1994",

doi = "10.1088/0268-1242/9/10/010",

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T1 - Stark-ladder transition in a type-II (GaAs)8/(AlAs)8 superlattice

AU - Yamaguchi, M.

AU - Nagasawa, H.

AU - Morifuji, M.

AU - Taniguchi, K.

AU - Hamaguchi, C.

AU - Gmachl, Claire F.

AU - Gornik, E.

PY - 1994

Y1 - 1994

N2 - The Stark-ladder transitions in a type-II (GaAs)8/(AlAs) 8 superlattice are investigated under various uniform electric fields by using electroreflectance spectroscopy. The electroreflectance spectra suggest the existence of a Stark-ladder transition from the heavy-hole state in the Gamma valence band to the electron state in the X conduction band. The Stark ladders of the X miniband show a strong mixing with the Gamma miniband. The experimental data from electroreflectance measurements are compared with a theoretical calculation based on the tight-binding method, and reasonable agreement is found.

AB - The Stark-ladder transitions in a type-II (GaAs)8/(AlAs) 8 superlattice are investigated under various uniform electric fields by using electroreflectance spectroscopy. The electroreflectance spectra suggest the existence of a Stark-ladder transition from the heavy-hole state in the Gamma valence band to the electron state in the X conduction band. The Stark ladders of the X miniband show a strong mixing with the Gamma miniband. The experimental data from electroreflectance measurements are compared with a theoretical calculation based on the tight-binding method, and reasonable agreement is found.

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JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 10

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ER -

Stark-ladder transition in a type-II (GaAs)₈/(AlAs)₈ superlattice

Abstract

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