Stacked quantum dot transistor and charge-induced confinement enhancement

L. J. Guo, S. Y. Chou

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

A new quantum dot transistor that has a polysilicon dot floating gate stacked on top of a silicon quantum dot channel has been fabricated. It is observed that charging of the floating gate not only shifts the threshold voltage of the quantum dot transistor, but also significantly increases the peak-to-valley ratio and peak separation in the conductance oscillations.

Original languageEnglish (US)
Pages (from-to)1030-1031
Number of pages2
JournalElectronics Letters
Volume34
Issue number10
DOIs
StatePublished - May 14 1998

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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