A new quantum dot transistor that has a polysilicon dot floating gate stacked on top of a silicon quantum dot channel has been fabricated. It is observed that charging of the floating gate not only shifts the threshold voltage of the quantum dot transistor, but also significantly increases the peak-to-valley ratio and peak separation in the conductance oscillations.
|Original language||English (US)|
|Number of pages||2|
|State||Published - May 14 1998|
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering