@inproceedings{c432722ce191423f9fd145ae6686e41d,
title = "Stable low-recombination n-Si/TiO2 hole-blocking interface and its effect on silicon heterojunction photovoltaics",
abstract = "TiO2 deposited on (100) crystalline silicon at near room temperature results in a hole-blocking, electron-transparent heterojunction. In this paper, we show that this interface can have a minority carrier recombination velocity on the order of 100 cm/s, which is stable for over 5 months in air. Second, we model the effect of such interfaces to replace the diffused n+/n (back surface field) layer at the cathode of p+/n and double heterojunction crystalline silicon solar cells. Simulations show that using TiO2/n-Si with the measured values of interface recombination velocity as a replacement for the n+/n diffusion at the cathode contact would yield power conversion efficiencies greater than 23%.",
keywords = "heterojunction, photovoltaic cells, silicon, titanium oxide",
author = "Janam Jhaveri and Sushobhan Avasthi and Ken Nagamatsu and Sturm, {James C.}",
note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 40th IEEE Photovoltaic Specialist Conference, PVSC 2014 ; Conference date: 08-06-2014 Through 13-06-2014",
year = "2014",
month = oct,
day = "15",
doi = "10.1109/PVSC.2014.6925206",
language = "English (US)",
series = "2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "1525--1528",
booktitle = "2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014",
address = "United States",
}