Stability of charged impurities in a coupled single electron transistor and antidot system

L. A. Farina, X. Bai, Ç Kurdak, S. Chakrabarti, P. Bhattacharya, Mansour Shayegan

Research output: Contribution to journalArticle

Abstract

We have fabricated devices on GaAs/AlGaAs heterostructures, containing two-dimensional electron gases, that consist of three point contacts surrounding an etched antidot with an Al / AlOx / Al single electron transistor. The single electron transistor measurement shows rearrangement of neighboring charged impurities with a characteristic stability time scale of 20 s in one device and greater than 1 h in a second device. We also measured the resistance of the point contact-antidot constriction versus magnetic field. In a device with a 20 s stability time, we see a high noise level and poor reproducibility. In a device with a long stability time, much greater than 1 h, we are able to see reproducible features including Aharonov-Bohm oscillations.

Original languageEnglish (US)
Pages (from-to)187-190
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume34
Issue number1-2
DOIs
StatePublished - Aug 1 2006

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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