Stability of charged impurities in a coupled single electron transistor and antidot system

L. A. Farina; X. Bai; Ç Kurdak; S. Chakrabarti; P. Bhattacharya; M. Shayegan

doi:10.1016/j.physe.2006.03.147

Stability of charged impurities in a coupled single electron transistor and antidot system

L. A. Farina, X. Bai, Ç Kurdak, S. Chakrabarti, P. Bhattacharya, M. Shayegan

Research output: Contribution to journal › Article › peer-review

Abstract

We have fabricated devices on GaAs/AlGaAs heterostructures, containing two-dimensional electron gases, that consist of three point contacts surrounding an etched antidot with an Al / AlO_x / Al single electron transistor. The single electron transistor measurement shows rearrangement of neighboring charged impurities with a characteristic stability time scale of 20 s in one device and greater than 1 h in a second device. We also measured the resistance of the point contact-antidot constriction versus magnetic field. In a device with a 20 s stability time, we see a high noise level and poor reproducibility. In a device with a long stability time, much greater than 1 h, we are able to see reproducible features including Aharonov-Bohm oscillations.

Original language	English (US)
Pages (from-to)	187-190
Number of pages	4
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	34
Issue number	1-2
DOIs	https://doi.org/10.1016/j.physe.2006.03.147
State	Published - Aug 2006

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

Keywords

Antidot
Edge states
Quantum Hall effect
Single electron transistor

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10.1016/j.physe.2006.03.147

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title = "Stability of charged impurities in a coupled single electron transistor and antidot system",

abstract = "We have fabricated devices on GaAs/AlGaAs heterostructures, containing two-dimensional electron gases, that consist of three point contacts surrounding an etched antidot with an Al / AlOx / Al single electron transistor. The single electron transistor measurement shows rearrangement of neighboring charged impurities with a characteristic stability time scale of 20 s in one device and greater than 1 h in a second device. We also measured the resistance of the point contact-antidot constriction versus magnetic field. In a device with a 20 s stability time, we see a high noise level and poor reproducibility. In a device with a long stability time, much greater than 1 h, we are able to see reproducible features including Aharonov-Bohm oscillations.",

keywords = "Antidot, Edge states, Quantum Hall effect, Single electron transistor",

author = "Farina, {L. A.} and X. Bai and {\c C} Kurdak and S. Chakrabarti and P. Bhattacharya and M. Shayegan",

note = "Funding Information: This work is supported by the Alfred P. Sloan Foundation, Research Corporation, and the NSP through Grant No. DMR-0092726. ",

year = "2006",

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doi = "10.1016/j.physe.2006.03.147",

language = "English (US)",

volume = "34",

pages = "187--190",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

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T1 - Stability of charged impurities in a coupled single electron transistor and antidot system

AU - Farina, L. A.

AU - Bai, X.

AU - Kurdak, Ç

AU - Chakrabarti, S.

AU - Bhattacharya, P.

AU - Shayegan, M.

N1 - Funding Information: This work is supported by the Alfred P. Sloan Foundation, Research Corporation, and the NSP through Grant No. DMR-0092726.

PY - 2006/8

Y1 - 2006/8

N2 - We have fabricated devices on GaAs/AlGaAs heterostructures, containing two-dimensional electron gases, that consist of three point contacts surrounding an etched antidot with an Al / AlOx / Al single electron transistor. The single electron transistor measurement shows rearrangement of neighboring charged impurities with a characteristic stability time scale of 20 s in one device and greater than 1 h in a second device. We also measured the resistance of the point contact-antidot constriction versus magnetic field. In a device with a 20 s stability time, we see a high noise level and poor reproducibility. In a device with a long stability time, much greater than 1 h, we are able to see reproducible features including Aharonov-Bohm oscillations.

AB - We have fabricated devices on GaAs/AlGaAs heterostructures, containing two-dimensional electron gases, that consist of three point contacts surrounding an etched antidot with an Al / AlOx / Al single electron transistor. The single electron transistor measurement shows rearrangement of neighboring charged impurities with a characteristic stability time scale of 20 s in one device and greater than 1 h in a second device. We also measured the resistance of the point contact-antidot constriction versus magnetic field. In a device with a 20 s stability time, we see a high noise level and poor reproducibility. In a device with a long stability time, much greater than 1 h, we are able to see reproducible features including Aharonov-Bohm oscillations.

KW - Antidot

KW - Edge states

KW - Quantum Hall effect

KW - Single electron transistor

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JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 1-2

ER -

Stability of charged impurities in a coupled single electron transistor and antidot system

Abstract

All Science Journal Classification (ASJC) codes

Keywords

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