Stability of charged impurities in a coupled single electron transistor and antidot system

L. A. Farina, X. Bai, Ç Kurdak, S. Chakrabarti, P. Bhattacharya, M. Shayegan

Research output: Contribution to journalArticlepeer-review


We have fabricated devices on GaAs/AlGaAs heterostructures, containing two-dimensional electron gases, that consist of three point contacts surrounding an etched antidot with an Al / AlOx / Al single electron transistor. The single electron transistor measurement shows rearrangement of neighboring charged impurities with a characteristic stability time scale of 20 s in one device and greater than 1 h in a second device. We also measured the resistance of the point contact-antidot constriction versus magnetic field. In a device with a 20 s stability time, we see a high noise level and poor reproducibility. In a device with a long stability time, much greater than 1 h, we are able to see reproducible features including Aharonov-Bohm oscillations.

Original languageEnglish (US)
Pages (from-to)187-190
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Issue number1-2
StatePublished - Aug 2006

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics


  • Antidot
  • Edge states
  • Quantum Hall effect
  • Single electron transistor


Dive into the research topics of 'Stability of charged impurities in a coupled single electron transistor and antidot system'. Together they form a unique fingerprint.

Cite this