Stability of amorphous-silicon TFTs deposited on clear plastic substrates at 250 °C to 280 °C

K. Long; A. Z. Kattamis; I. C. Cheng; H. Gleskova; S. Wagner; J. C. Sturm

doi:10.1109/LED.2005.863147

Stability of amorphous-silicon TFTs deposited on clear plastic substrates at 250 °C to 280 °C

K. Long
, A. Z. Kattamis
, I. C. Cheng
, H. Gleskova
, S. Wagner
, J. C. Sturm

Research output: Contribution to journal › Article › peer-review

100 Scopus citations

Abstract

Amorphous-silicon (a-Si) thin-film transistors (TFTs) were fabricated on a free-standing new clear plastic substrate with high glass transition temperature (T_g) of > 315 °C and low coefficient of thermal expansion of < 10 ppm/°C. Maximum process temperatures on the substrates were 250 °C and 280 °C, close to the temperatures used in industrial a-Si TFT production on glass substrates. The first TFTs made at 280 °C have dc characteristics comparable to TFTs made on glass. The stability of the 250 °C TFTs on clear plastic is approaching that of TFTs made on glass at 300 °C-350 °C. TFT characteristics and stability depend only on process temperature and not on substrate type.

Original language	English (US)
Pages (from-to)	111-113
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	27
Issue number	2
DOIs	https://doi.org/10.1109/LED.2005.863147
State	Published - Feb 2006

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Keywords

Amorphous-silicon (a-Si)
Device stability
Flexible
Plastic substrate
Thin-film transistor (TFT)

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10.1109/LED.2005.863147

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title = "Stability of amorphous-silicon TFTs deposited on clear plastic substrates at 250 °C to 280 °C",

abstract = "Amorphous-silicon (a-Si) thin-film transistors (TFTs) were fabricated on a free-standing new clear plastic substrate with high glass transition temperature (Tg) of > 315 °C and low coefficient of thermal expansion of < 10 ppm/°C. Maximum process temperatures on the substrates were 250 °C and 280 °C, close to the temperatures used in industrial a-Si TFT production on glass substrates. The first TFTs made at 280 °C have dc characteristics comparable to TFTs made on glass. The stability of the 250 °C TFTs on clear plastic is approaching that of TFTs made on glass at 300 °C-350 °C. TFT characteristics and stability depend only on process temperature and not on substrate type.",

keywords = "Amorphous-silicon (a-Si), Device stability, Flexible, Plastic substrate, Thin-film transistor (TFT)",

author = "K. Long and Kattamis, \{A. Z.\} and Cheng, \{I. C.\} and H. Gleskova and S. Wagner and Sturm, \{J. C.\}",

note = "Funding Information: The authors gratefully acknowledge the DuPont Company and NJCST for supporting this research and DuPont Company for providing the substrates. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.",

year = "2006",

month = feb,

doi = "10.1109/LED.2005.863147",

language = "English (US)",

volume = "27",

pages = "111--113",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "2",

}

TY - JOUR

T1 - Stability of amorphous-silicon TFTs deposited on clear plastic substrates at 250 °C to 280 °C

AU - Long, K.

AU - Kattamis, A. Z.

AU - Cheng, I. C.

AU - Gleskova, H.

AU - Wagner, S.

AU - Sturm, J. C.

N1 - Funding Information: The authors gratefully acknowledge the DuPont Company and NJCST for supporting this research and DuPont Company for providing the substrates. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.

PY - 2006/2

Y1 - 2006/2

N2 - Amorphous-silicon (a-Si) thin-film transistors (TFTs) were fabricated on a free-standing new clear plastic substrate with high glass transition temperature (Tg) of > 315 °C and low coefficient of thermal expansion of < 10 ppm/°C. Maximum process temperatures on the substrates were 250 °C and 280 °C, close to the temperatures used in industrial a-Si TFT production on glass substrates. The first TFTs made at 280 °C have dc characteristics comparable to TFTs made on glass. The stability of the 250 °C TFTs on clear plastic is approaching that of TFTs made on glass at 300 °C-350 °C. TFT characteristics and stability depend only on process temperature and not on substrate type.

AB - Amorphous-silicon (a-Si) thin-film transistors (TFTs) were fabricated on a free-standing new clear plastic substrate with high glass transition temperature (Tg) of > 315 °C and low coefficient of thermal expansion of < 10 ppm/°C. Maximum process temperatures on the substrates were 250 °C and 280 °C, close to the temperatures used in industrial a-Si TFT production on glass substrates. The first TFTs made at 280 °C have dc characteristics comparable to TFTs made on glass. The stability of the 250 °C TFTs on clear plastic is approaching that of TFTs made on glass at 300 °C-350 °C. TFT characteristics and stability depend only on process temperature and not on substrate type.

KW - Amorphous-silicon (a-Si)

KW - Device stability

KW - Flexible

KW - Plastic substrate

KW - Thin-film transistor (TFT)

UR - https://www.scopus.com/pages/publications/31544465946

UR - https://www.scopus.com/pages/publications/31544465946#tab=citedBy

U2 - 10.1109/LED.2005.863147

DO - 10.1109/LED.2005.863147

M3 - Article

AN - SCOPUS:31544465946

SN - 0741-3106

VL - 27

SP - 111

EP - 113

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 2

ER -

Stability of amorphous-silicon TFTs deposited on clear plastic substrates at 250 °C to 280 °C

Abstract

All Science Journal Classification (ASJC) codes

Keywords

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