Amorphous-silicon (a-Si) thin-film transistors (TFTs) were fabricated on a free-standing new clear plastic substrate with high glass transition temperature (Tg) of > 315 °C and low coefficient of thermal expansion of < 10 ppm/°C. Maximum process temperatures on the substrates were 250 °C and 280 °C, close to the temperatures used in industrial a-Si TFT production on glass substrates. The first TFTs made at 280 °C have dc characteristics comparable to TFTs made on glass. The stability of the 250 °C TFTs on clear plastic is approaching that of TFTs made on glass at 300 °C-350 °C. TFT characteristics and stability depend only on process temperature and not on substrate type.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
- Amorphous-silicon (a-Si)
- Device stability
- Plastic substrate
- Thin-film transistor (TFT)