Stability of amorphous-silicon TFTs deposited on clear plastic substrates at 250 °C to 280 °C

K. Long, A. Z. Kattamis, I. C. Cheng, H. Gleskova, S. Wagner, James Christopher Sturm

Research output: Contribution to journalArticle

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Abstract

Amorphous-silicon (a-Si) thin-film transistors (TFTs) were fabricated on a free-standing new clear plastic substrate with high glass transition temperature (Tg) of > 315 °C and low coefficient of thermal expansion of < 10 ppm/°C. Maximum process temperatures on the substrates were 250 °C and 280 °C, close to the temperatures used in industrial a-Si TFT production on glass substrates. The first TFTs made at 280 °C have dc characteristics comparable to TFTs made on glass. The stability of the 250 °C TFTs on clear plastic is approaching that of TFTs made on glass at 300 °C-350 °C. TFT characteristics and stability depend only on process temperature and not on substrate type.

Original languageEnglish (US)
Pages (from-to)111-113
Number of pages3
JournalIEEE Electron Device Letters
Volume27
Issue number2
DOIs
StatePublished - Feb 1 2006

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Keywords

  • Amorphous-silicon (a-Si)
  • Device stability
  • Flexible
  • Plastic substrate
  • Thin-film transistor (TFT)

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