Spintronics with Si quantum dots

Leonid P. Rokhinson, Lingue J. Guo, Steven Y. Chou, Daniel C. Tsui

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

Electron transport through small Si quantum dot is investigated. The B-dependence of energy levels is dominated by the Zeeman shift, allowing us to measure the spin difference between two successive ground states directly. Combined with the ability to change the number of electrons N in the dot between 0 and 30, we are able to map the spin of the the dot as a function of N and B. Various spin-related phenomena, such as singlet-triplet transitions and spin blockade, are observed.

Original languageEnglish (US)
Pages (from-to)147-153
Number of pages7
JournalMicroelectronic Engineering
Volume63
Issue number1-3
DOIs
StatePublished - Aug 1 2002

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Keywords

  • Coulomb blockade
  • Quantum dots
  • Si nanostructures
  • Spin blockade

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