Spintronics with Si quantum dots

Leonid P. Rokhinson; Lingue J. Guo; Steven Y. Chou; Daniel C. Tsui

doi:10.1016/S0167-9317(02)00609-3

Spintronics with Si quantum dots

Leonid P. Rokhinson, Lingue J. Guo, Steven Y. Chou, Daniel C. Tsui

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Electron transport through small Si quantum dot is investigated. The B-dependence of energy levels is dominated by the Zeeman shift, allowing us to measure the spin difference between two successive ground states directly. Combined with the ability to change the number of electrons N in the dot between 0 and 30, we are able to map the spin of the the dot as a function of N and B. Various spin-related phenomena, such as singlet-triplet transitions and spin blockade, are observed.

Original language	English (US)
Pages (from-to)	147-153
Number of pages	7
Journal	Microelectronic Engineering
Volume	63
Issue number	1-3
DOIs	https://doi.org/10.1016/S0167-9317(02)00609-3
State	Published - Aug 2002

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

Keywords

Coulomb blockade
Quantum dots
Si nanostructures
Spin blockade

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10.1016/S0167-9317(02)00609-3

Cite this

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title = "Spintronics with Si quantum dots",

abstract = "Electron transport through small Si quantum dot is investigated. The B-dependence of energy levels is dominated by the Zeeman shift, allowing us to measure the spin difference between two successive ground states directly. Combined with the ability to change the number of electrons N in the dot between 0 and 30, we are able to map the spin of the the dot as a function of N and B. Various spin-related phenomena, such as singlet-triplet transitions and spin blockade, are observed.",

keywords = "Coulomb blockade, Quantum dots, Si nanostructures, Spin blockade",

author = "Rokhinson, {Leonid P.} and Guo, {Lingue J.} and Chou, {Steven Y.} and Tsui, {Daniel C.}",

note = "Funding Information: The authors acknowledge financial support from ARO, ONR and DARPA and by the MARCO Focused Research Center on Materials, Structures and Devices which is funded at the MIT, in part by MARCO under contract 2001-MT-887 and DARPA under grant MDA972-01-1-0035.",

year = "2002",

month = aug,

doi = "10.1016/S0167-9317(02)00609-3",

language = "English (US)",

volume = "63",

pages = "147--153",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier B.V.",

number = "1-3",

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TY - JOUR

T1 - Spintronics with Si quantum dots

AU - Rokhinson, Leonid P.

AU - Guo, Lingue J.

AU - Chou, Steven Y.

AU - Tsui, Daniel C.

N1 - Funding Information: The authors acknowledge financial support from ARO, ONR and DARPA and by the MARCO Focused Research Center on Materials, Structures and Devices which is funded at the MIT, in part by MARCO under contract 2001-MT-887 and DARPA under grant MDA972-01-1-0035.

PY - 2002/8

Y1 - 2002/8

N2 - Electron transport through small Si quantum dot is investigated. The B-dependence of energy levels is dominated by the Zeeman shift, allowing us to measure the spin difference between two successive ground states directly. Combined with the ability to change the number of electrons N in the dot between 0 and 30, we are able to map the spin of the the dot as a function of N and B. Various spin-related phenomena, such as singlet-triplet transitions and spin blockade, are observed.

AB - Electron transport through small Si quantum dot is investigated. The B-dependence of energy levels is dominated by the Zeeman shift, allowing us to measure the spin difference between two successive ground states directly. Combined with the ability to change the number of electrons N in the dot between 0 and 30, we are able to map the spin of the the dot as a function of N and B. Various spin-related phenomena, such as singlet-triplet transitions and spin blockade, are observed.

KW - Coulomb blockade

KW - Quantum dots

KW - Si nanostructures

KW - Spin blockade

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DO - 10.1016/S0167-9317(02)00609-3

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VL - 63

SP - 147

EP - 153

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 1-3

ER -

Spintronics with Si quantum dots

Abstract

All Science Journal Classification (ASJC) codes

Keywords

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