Spin-valve effects in nickel/silicon/nickel junctions

Y. Q. Jia, Rick C. Shi, Stephen Y. Chou

Research output: Contribution to journalArticlepeer-review

55 Scopus citations


We report on fabrication and characterization of a planar spin-valve device which has two sets of interdigited nanoscale Ni fingers as two electrodes in Schottky contact with Si. The finger width is 75 nm for one set and 150 nm for the other. A large length-to-width ratio of the fingers results in a single domain magnetization and a sharp magnetoresistance (MR) response. The switching field of the finger is determined by the finger width and spacing due to magnetostatic interaction. MR measurements reveal spin-valve effects in the Ni/Si/Ni junctions with MR changes of 0.3-0.6 % at room temperature. The effects are discussed within a spin-valve model.

Original languageEnglish (US)
Pages (from-to)4707-4709
Number of pages3
JournalIEEE Transactions on Magnetics
Issue number5 PART 2
StatePublished - 1996
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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