Spin-valve effects in nickel/silicon/nickel junctions

Y. Q. Jia; Rick C. Shi; Stephen Y. Chou

doi:10.1109/20.539125

Spin-valve effects in nickel/silicon/nickel junctions

Y. Q. Jia, Rick C. Shi, Stephen Y. Chou

Research output: Contribution to journal › Article › peer-review

55 Scopus citations

Abstract

We report on fabrication and characterization of a planar spin-valve device which has two sets of interdigited nanoscale Ni fingers as two electrodes in Schottky contact with Si. The finger width is 75 nm for one set and 150 nm for the other. A large length-to-width ratio of the fingers results in a single domain magnetization and a sharp magnetoresistance (MR) response. The switching field of the finger is determined by the finger width and spacing due to magnetostatic interaction. MR measurements reveal spin-valve effects in the Ni/Si/Ni junctions with MR changes of 0.3-0.6 % at room temperature. The effects are discussed within a spin-valve model.

Original language	English (US)
Pages (from-to)	4707-4709
Number of pages	3
Journal	IEEE Transactions on Magnetics
Volume	32
Issue number	5 PART 2
DOIs	https://doi.org/10.1109/20.539125
State	Published - 1996
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/20.539125

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@article{47d10ec10649496d8d7a8a8c940abd49,

title = "Spin-valve effects in nickel/silicon/nickel junctions",

abstract = "We report on fabrication and characterization of a planar spin-valve device which has two sets of interdigited nanoscale Ni fingers as two electrodes in Schottky contact with Si. The finger width is 75 nm for one set and 150 nm for the other. A large length-to-width ratio of the fingers results in a single domain magnetization and a sharp magnetoresistance (MR) response. The switching field of the finger is determined by the finger width and spacing due to magnetostatic interaction. MR measurements reveal spin-valve effects in the Ni/Si/Ni junctions with MR changes of 0.3-0.6 % at room temperature. The effects are discussed within a spin-valve model.",

author = "Jia, {Y. Q.} and Shi, {Rick C.} and Chou, {Stephen Y.}",

note = "Funding Information: The FM/S/FM junction was first proposed for magnetic device application by one of the authors [6]. The device structure is illustrated in Fig. 1 with Ni as the FM electrode and Si as the semiconductor substrate. It consists of two sets of interdigited ferromagnetic nanofingers on top of the semiconductor substrate. Each set as an electrode has 10 Manuscript received March 15, 1996 Y.Q. Jia, e-mail [email protected] R.C. Shi, e-mail [email protected] S.Y. Chou, e-mail [email protected],f ax (6121625- 4583; phone (612)625-1316 This work is supported by ONR and ARPA.",

year = "1996",

doi = "10.1109/20.539125",

language = "English (US)",

volume = "32",

pages = "4707--4709",

journal = "IEEE Transactions on Magnetics",

issn = "0018-9464",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "5 PART 2",

}

TY - JOUR

T1 - Spin-valve effects in nickel/silicon/nickel junctions

AU - Jia, Y. Q.

AU - Shi, Rick C.

AU - Chou, Stephen Y.

N1 - Funding Information: The FM/S/FM junction was first proposed for magnetic device application by one of the authors [6]. The device structure is illustrated in Fig. 1 with Ni as the FM electrode and Si as the semiconductor substrate. It consists of two sets of interdigited ferromagnetic nanofingers on top of the semiconductor substrate. Each set as an electrode has 10 Manuscript received March 15, 1996 Y.Q. Jia, e-mail [email protected] R.C. Shi, e-mail [email protected] S.Y. Chou, e-mail [email protected],f ax (6121625- 4583; phone (612)625-1316 This work is supported by ONR and ARPA.

PY - 1996

Y1 - 1996

N2 - We report on fabrication and characterization of a planar spin-valve device which has two sets of interdigited nanoscale Ni fingers as two electrodes in Schottky contact with Si. The finger width is 75 nm for one set and 150 nm for the other. A large length-to-width ratio of the fingers results in a single domain magnetization and a sharp magnetoresistance (MR) response. The switching field of the finger is determined by the finger width and spacing due to magnetostatic interaction. MR measurements reveal spin-valve effects in the Ni/Si/Ni junctions with MR changes of 0.3-0.6 % at room temperature. The effects are discussed within a spin-valve model.

AB - We report on fabrication and characterization of a planar spin-valve device which has two sets of interdigited nanoscale Ni fingers as two electrodes in Schottky contact with Si. The finger width is 75 nm for one set and 150 nm for the other. A large length-to-width ratio of the fingers results in a single domain magnetization and a sharp magnetoresistance (MR) response. The switching field of the finger is determined by the finger width and spacing due to magnetostatic interaction. MR measurements reveal spin-valve effects in the Ni/Si/Ni junctions with MR changes of 0.3-0.6 % at room temperature. The effects are discussed within a spin-valve model.

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U2 - 10.1109/20.539125

DO - 10.1109/20.539125

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SN - 0018-9464

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SP - 4707

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JO - IEEE Transactions on Magnetics

JF - IEEE Transactions on Magnetics

IS - 5 PART 2

ER -

Spin-valve effects in nickel/silicon/nickel junctions

Abstract

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