Spin valve effect in self-exchange biased ferromagnetic metal/semiconductor bilayers

M. Zhu; M. J. Wilson; B. L. Sheu; P. Mitra; P. Schiffer; N. Samarth

doi:10.1063/1.2806966

Spin valve effect in self-exchange biased ferromagnetic metal/semiconductor bilayers

M. Zhu, M. J. Wilson, B. L. Sheu, P. Mitra, P. Schiffer, N. Samarth

Research output: Contribution to journal › Article › peer-review

25 Scopus citations

Abstract

We report magnetization and magetoresistance measurements in hybrid ferromagnetic metal/semiconductor heterostructures comprised of MnAs (Ga,Mn) As bilayers. Our measurements show that the (metallic) MnAs and (semiconducting) (Ga,Mn)As layers are exchange coupled, resulting in an exchange biasing of the magnetically softer (Ga,Mn)As layer that weakens with layer thickness. Magnetoresistance measurements in the current-perpendicular-to-the-plane geometry show a spin valve effect in these self-exchange biased bilayers. Similar measurements in MnAsp-GaAs (Ga,Mn) As trilayers show that the exchange coupling diminishes with spatial separation between the layers.

Original language	English (US)
Article number	192503
Journal	Applied Physics Letters
Volume	91
Issue number	19
DOIs	https://doi.org/10.1063/1.2806966
State	Published - 2007
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.2806966

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title = "Spin valve effect in self-exchange biased ferromagnetic metal/semiconductor bilayers",

abstract = "We report magnetization and magetoresistance measurements in hybrid ferromagnetic metal/semiconductor heterostructures comprised of MnAs (Ga,Mn) As bilayers. Our measurements show that the (metallic) MnAs and (semiconducting) (Ga,Mn)As layers are exchange coupled, resulting in an exchange biasing of the magnetically softer (Ga,Mn)As layer that weakens with layer thickness. Magnetoresistance measurements in the current-perpendicular-to-the-plane geometry show a spin valve effect in these self-exchange biased bilayers. Similar measurements in MnAsp-GaAs (Ga,Mn) As trilayers show that the exchange coupling diminishes with spatial separation between the layers.",

author = "M. Zhu and Wilson, {M. J.} and Sheu, {B. L.} and P. Mitra and P. Schiffer and N. Samarth",

note = "Funding Information: This research has been supported by Grant No. ONR N0014-06-1-0428 through Subcontract No. KK6135 with the University of California, Santa Barbara, and NSF DMR-0305238 and DMR-0401486. This work was performed in part at the Penn State Nanofabrication Facility, a member of the NSF National Nanofabrication Users Network. We thank A. Balk for AFM measurements of our samples.",

year = "2007",

doi = "10.1063/1.2806966",

language = "English (US)",

volume = "91",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "19",

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TY - JOUR

T1 - Spin valve effect in self-exchange biased ferromagnetic metal/semiconductor bilayers

AU - Zhu, M.

AU - Wilson, M. J.

AU - Sheu, B. L.

AU - Mitra, P.

AU - Schiffer, P.

AU - Samarth, N.

N1 - Funding Information: This research has been supported by Grant No. ONR N0014-06-1-0428 through Subcontract No. KK6135 with the University of California, Santa Barbara, and NSF DMR-0305238 and DMR-0401486. This work was performed in part at the Penn State Nanofabrication Facility, a member of the NSF National Nanofabrication Users Network. We thank A. Balk for AFM measurements of our samples.

PY - 2007

Y1 - 2007

N2 - We report magnetization and magetoresistance measurements in hybrid ferromagnetic metal/semiconductor heterostructures comprised of MnAs (Ga,Mn) As bilayers. Our measurements show that the (metallic) MnAs and (semiconducting) (Ga,Mn)As layers are exchange coupled, resulting in an exchange biasing of the magnetically softer (Ga,Mn)As layer that weakens with layer thickness. Magnetoresistance measurements in the current-perpendicular-to-the-plane geometry show a spin valve effect in these self-exchange biased bilayers. Similar measurements in MnAsp-GaAs (Ga,Mn) As trilayers show that the exchange coupling diminishes with spatial separation between the layers.

AB - We report magnetization and magetoresistance measurements in hybrid ferromagnetic metal/semiconductor heterostructures comprised of MnAs (Ga,Mn) As bilayers. Our measurements show that the (metallic) MnAs and (semiconducting) (Ga,Mn)As layers are exchange coupled, resulting in an exchange biasing of the magnetically softer (Ga,Mn)As layer that weakens with layer thickness. Magnetoresistance measurements in the current-perpendicular-to-the-plane geometry show a spin valve effect in these self-exchange biased bilayers. Similar measurements in MnAsp-GaAs (Ga,Mn) As trilayers show that the exchange coupling diminishes with spatial separation between the layers.

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DO - 10.1063/1.2806966

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

M1 - 192503

ER -

Spin valve effect in self-exchange biased ferromagnetic metal/semiconductor bilayers

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All Science Journal Classification (ASJC) codes

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