Spin susceptibility of a two-dimensional electron system in GaAs towards the weak interaction region

Y. W. Tan; J. Zhu; H. L. Stormer; L. N. Pfeiffer; K. W. Baldwin; K. W. West

doi:10.1103/PhysRevB.73.045334

Spin susceptibility of a two-dimensional electron system in GaAs towards the weak interaction region

Y. W. Tan, J. Zhu, H. L. Stormer, L. N. Pfeiffer, K. W. Baldwin, K. W. West

Research output: Contribution to journal › Article › peer-review

24 Scopus citations

Abstract

We determine the spin susceptibility χ in the weak interaction regime of a tunable, high quality, two-dimensional electron system in a GaAs AlGaAs heterostructure. The band structure effects, modifying mass and g -factor, are carefully taken into accounts since they become appreciable for the large electron densities of the weak interaction regime. When properly normalized, χ decreases monotonically from 3 to 1.1 with increasing density over our experimental range from 0.1 to 4× 1011 cm-2. In the high density limit, χ tends correctly towards χ→1 and compare well with recent theory.

Original language	English (US)
Article number	045334
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	73
Issue number	4
DOIs	https://doi.org/10.1103/PhysRevB.73.045334
State	Published - 2006
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1103/PhysRevB.73.045334

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abstract = "We determine the spin susceptibility χ in the weak interaction regime of a tunable, high quality, two-dimensional electron system in a GaAs AlGaAs heterostructure. The band structure effects, modifying mass and g -factor, are carefully taken into accounts since they become appreciable for the large electron densities of the weak interaction regime. When properly normalized, χ decreases monotonically from 3 to 1.1 with increasing density over our experimental range from 0.1 to 4× 1011 cm-2. In the high density limit, χ tends correctly towards χ→1 and compare well with recent theory.",

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T1 - Spin susceptibility of a two-dimensional electron system in GaAs towards the weak interaction region

AU - Tan, Y. W.

AU - Zhu, J.

AU - Stormer, H. L.

AU - Pfeiffer, L. N.

AU - Baldwin, K. W.

AU - West, K. W.

PY - 2006

Y1 - 2006

N2 - We determine the spin susceptibility χ in the weak interaction regime of a tunable, high quality, two-dimensional electron system in a GaAs AlGaAs heterostructure. The band structure effects, modifying mass and g -factor, are carefully taken into accounts since they become appreciable for the large electron densities of the weak interaction regime. When properly normalized, χ decreases monotonically from 3 to 1.1 with increasing density over our experimental range from 0.1 to 4× 1011 cm-2. In the high density limit, χ tends correctly towards χ→1 and compare well with recent theory.

AB - We determine the spin susceptibility χ in the weak interaction regime of a tunable, high quality, two-dimensional electron system in a GaAs AlGaAs heterostructure. The band structure effects, modifying mass and g -factor, are carefully taken into accounts since they become appreciable for the large electron densities of the weak interaction regime. When properly normalized, χ decreases monotonically from 3 to 1.1 with increasing density over our experimental range from 0.1 to 4× 1011 cm-2. In the high density limit, χ tends correctly towards χ→1 and compare well with recent theory.

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ER -

Spin susceptibility of a two-dimensional electron system in GaAs towards the weak interaction region

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All Science Journal Classification (ASJC) codes

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