Abstract
We determined the spin susceptibility χ and the effective mass m* towards the high density limit. Using a tunable GaAs/AlGaAs heterostructure, we can vary the 2D electron density from n = 1 × 1010 cm- 2 to 4 × 1011 cm- 2. From ∼ 5 × 1010 cm- 2 to our highest densities the mass values fall ∼ 10 % below the band mass of GaAs. The enhancement of χ decreases monotonically from a factor of 3 to 0.88 with increasing density. It continues to follow a previously observed power law, which leads to an unphysical limit for n → ∞. Band structure effects affecting mass and g-factor become appreciable for large n and, when taken into account, lead to the correct limiting behavior of χ. Numerical calculations are in qualitative agreement with our data but differ in detail.
Original language | English (US) |
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Pages (from-to) | 260-263 |
Number of pages | 4 |
Journal | Physica E: Low-Dimensional Systems and Nanostructures |
Volume | 34 |
Issue number | 1-2 |
DOIs | |
State | Published - Aug 2006 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
Keywords
- 2DEG
- Effective masses
- g-factor
- Nonparabolicity
- Spin susceptibility