Abstract
We present an analysis for two recent experiments in bulk strained semiconductors and show that a new, previously overlooked, strain spin-orbit coupling term may play a fundamental role. We propose simple experiments that could clarify the origin of strain-induced spin-orbit coupling terms in inversion asymmetric semiconductors. We predict that a uniform magnetization parallel to the electric field will be induced for specific directions of the applied electric field. We also propose special geometries to detect spin currents in strained semiconductors.
Original language | English (US) |
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Article number | 115204 |
Journal | Physical Review B - Condensed Matter and Materials Physics |
Volume | 72 |
Issue number | 11 |
DOIs | |
State | Published - Sep 15 2005 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics