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Spin resonance of 2D electrons in a large-area silicon MOSFET
S. Shankar
, A. M. Tyryshkin
, S. Avasthi
,
S. A. Lyon
Electrical and Computer Engineering
Princeton Materials Institute
Research output
:
Contribution to journal
›
Article
›
peer-review
9
Scopus citations
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Keyphrases
Spin-wave Resonance
100%
Silicon MOSFET
100%
Resonance Measurement
33%
Curie
33%
Si-SiO2 Interface
33%
Electron Spin
33%
Engineering
Two Dimensional
100%
Metal-Oxide-Semiconductor Field-Effect Transistor
100%
Gate Voltage
75%
Temperature Dependence
25%
Physics
Field Effect Transistor
100%
Spin Resonance
100%
Electron Spin
25%
Chemistry
Electron Spin
100%
Electron Spin Resonance Signal
50%
Material Science
Electron Paramagnetic Resonance Spectroscopy
50%