Spin resonance of 2D electrons in a large-area silicon MOSFET

S. Shankar, A. M. Tyryshkin, S. Avasthi, S. A. Lyon

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

We report electron spin resonance (ESR) measurements on a large-area silicon MOSFET. An ESR signal at g-factor 1.9999(1), and with a linewidth of 0.6 G, is observed and found to arise from two-dimensional (2D) electrons at the Si/SiO2 interface. The signal and its intensity show a pronounced dependence on applied gate voltage. At gate voltages below the threshold of the MOSFET, the signal is from weakly confined, isolated electrons as evidenced by the Curie-like temperature dependence of its intensity. The situation above threshold appears more complicated. These large-area MOSFETs provide the capability to controllably tune from insulating to conducting regimes by adjusting the gate voltage while monitoring the state of the 2D electron spins spectroscopically.

Original languageEnglish (US)
Pages (from-to)1659-1661
Number of pages3
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume40
Issue number5
DOIs
StatePublished - Mar 2008

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

Keywords

  • 2D electron gas (2DEG)
  • EDMR
  • Electron spin resonance (ESR)
  • MOSFET
  • Si/SiO interface

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