Spin resonance of 2D electrons in a large-area silicon MOSFET

S. Shankar; A. M. Tyryshkin; S. Avasthi; S. A. Lyon

doi:10.1016/j.physe.2007.10.030

Spin resonance of 2D electrons in a large-area silicon MOSFET

S. Shankar, A. M. Tyryshkin, S. Avasthi, S. A. Lyon

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

We report electron spin resonance (ESR) measurements on a large-area silicon MOSFET. An ESR signal at g-factor 1.9999(1), and with a linewidth of 0.6 G, is observed and found to arise from two-dimensional (2D) electrons at the Si/SiO₂ interface. The signal and its intensity show a pronounced dependence on applied gate voltage. At gate voltages below the threshold of the MOSFET, the signal is from weakly confined, isolated electrons as evidenced by the Curie-like temperature dependence of its intensity. The situation above threshold appears more complicated. These large-area MOSFETs provide the capability to controllably tune from insulating to conducting regimes by adjusting the gate voltage while monitoring the state of the 2D electron spins spectroscopically.

Original language	English (US)
Pages (from-to)	1659-1661
Number of pages	3
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	40
Issue number	5
DOIs	https://doi.org/10.1016/j.physe.2007.10.030
State	Published - Mar 2008

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

Keywords

2D electron gas (2DEG)
EDMR
Electron spin resonance (ESR)
MOSFET
Si/SiO interface

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10.1016/j.physe.2007.10.030

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title = "Spin resonance of 2D electrons in a large-area silicon MOSFET",

abstract = "We report electron spin resonance (ESR) measurements on a large-area silicon MOSFET. An ESR signal at g-factor 1.9999(1), and with a linewidth of 0.6 G, is observed and found to arise from two-dimensional (2D) electrons at the Si/SiO2 interface. The signal and its intensity show a pronounced dependence on applied gate voltage. At gate voltages below the threshold of the MOSFET, the signal is from weakly confined, isolated electrons as evidenced by the Curie-like temperature dependence of its intensity. The situation above threshold appears more complicated. These large-area MOSFETs provide the capability to controllably tune from insulating to conducting regimes by adjusting the gate voltage while monitoring the state of the 2D electron spins spectroscopically.",

keywords = "2D electron gas (2DEG), EDMR, Electron spin resonance (ESR), MOSFET, Si/SiO interface",

author = "S. Shankar and Tyryshkin, {A. M.} and S. Avasthi and Lyon, {S. A.}",

year = "2008",

month = mar,

doi = "10.1016/j.physe.2007.10.030",

language = "English (US)",

volume = "40",

pages = "1659--1661",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

issn = "1386-9477",

publisher = "Elsevier B.V.",

number = "5",

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TY - JOUR

T1 - Spin resonance of 2D electrons in a large-area silicon MOSFET

AU - Shankar, S.

AU - Tyryshkin, A. M.

AU - Avasthi, S.

AU - Lyon, S. A.

PY - 2008/3

Y1 - 2008/3

N2 - We report electron spin resonance (ESR) measurements on a large-area silicon MOSFET. An ESR signal at g-factor 1.9999(1), and with a linewidth of 0.6 G, is observed and found to arise from two-dimensional (2D) electrons at the Si/SiO2 interface. The signal and its intensity show a pronounced dependence on applied gate voltage. At gate voltages below the threshold of the MOSFET, the signal is from weakly confined, isolated electrons as evidenced by the Curie-like temperature dependence of its intensity. The situation above threshold appears more complicated. These large-area MOSFETs provide the capability to controllably tune from insulating to conducting regimes by adjusting the gate voltage while monitoring the state of the 2D electron spins spectroscopically.

AB - We report electron spin resonance (ESR) measurements on a large-area silicon MOSFET. An ESR signal at g-factor 1.9999(1), and with a linewidth of 0.6 G, is observed and found to arise from two-dimensional (2D) electrons at the Si/SiO2 interface. The signal and its intensity show a pronounced dependence on applied gate voltage. At gate voltages below the threshold of the MOSFET, the signal is from weakly confined, isolated electrons as evidenced by the Curie-like temperature dependence of its intensity. The situation above threshold appears more complicated. These large-area MOSFETs provide the capability to controllably tune from insulating to conducting regimes by adjusting the gate voltage while monitoring the state of the 2D electron spins spectroscopically.

KW - 2D electron gas (2DEG)

KW - EDMR

KW - Electron spin resonance (ESR)

KW - MOSFET

KW - Si/SiO interface

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UR - http://www.scopus.com/inward/citedby.url?scp=39649101891&partnerID=8YFLogxK

U2 - 10.1016/j.physe.2007.10.030

DO - 10.1016/j.physe.2007.10.030

M3 - Article

AN - SCOPUS:39649101891

SN - 1386-9477

VL - 40

SP - 1659

EP - 1661

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 5

ER -

Spin resonance of 2D electrons in a large-area silicon MOSFET

Abstract

All Science Journal Classification (ASJC) codes

Keywords

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