Abstract
We report electron spin resonance (ESR) measurements on a large-area silicon MOSFET. An ESR signal at g-factor 1.9999(1), and with a linewidth of 0.6 G, is observed and found to arise from two-dimensional (2D) electrons at the Si/SiO2 interface. The signal and its intensity show a pronounced dependence on applied gate voltage. At gate voltages below the threshold of the MOSFET, the signal is from weakly confined, isolated electrons as evidenced by the Curie-like temperature dependence of its intensity. The situation above threshold appears more complicated. These large-area MOSFETs provide the capability to controllably tune from insulating to conducting regimes by adjusting the gate voltage while monitoring the state of the 2D electron spins spectroscopically.
Original language | English (US) |
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Pages (from-to) | 1659-1661 |
Number of pages | 3 |
Journal | Physica E: Low-Dimensional Systems and Nanostructures |
Volume | 40 |
Issue number | 5 |
DOIs | |
State | Published - Mar 2008 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
Keywords
- 2D electron gas (2DEG)
- EDMR
- Electron spin resonance (ESR)
- MOSFET
- Si/SiO interface