@inproceedings{0c660addfcc84e25977d770426fdbbc1,
title = "Spin relaxation in SiGe islands",
abstract = "We investigate spin relaxation of electrons confined in SiGe structures produced by MBE growth of Ge islands on unstructured and structured Si substrates that cause strain in a Si layer above. These structures are investigated by photoluminescence spectroscopy and electron spin resonance both in continuous wave and pulsed mode. These structures show an ESR line-width and a g-factor of conduction electrons in Si with inhomogeneous broadening and no 2D anisotropy.",
keywords = "Quantum dots, Spintronics",
author = "H. Malissa and W. Jantsch and G. Chen and H. Lichtenberger and T. Fromherz and F. Sch{\"a}ffler and G. Bauer and A. Tyryshkin and S. Lyon and Z. Wilamowski",
year = "2007",
doi = "10.1063/1.2730387",
language = "English (US)",
isbn = "9780735403970",
series = "AIP Conference Proceedings",
pages = "1317--1318",
booktitle = "Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B",
note = "28th International Conference on the Physics of Semiconductors, ICPS 2006 ; Conference date: 24-07-2006 Through 28-07-2006",
}