Spin relaxation in SiGe islands

H. Malissa, W. Jantsch, G. Chen, H. Lichtenberger, T. Fromherz, F. Schäffler, G. Bauer, A. Tyryshkin, Stephen Aplin Lyon, Z. Wilamowski

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

We investigate spin relaxation of electrons confined in SiGe structures produced by MBE growth of Ge islands on unstructured and structured Si substrates that cause strain in a Si layer above. These structures are investigated by photoluminescence spectroscopy and electron spin resonance both in continuous wave and pulsed mode. These structures show an ESR line-width and a g-factor of conduction electrons in Si with inhomogeneous broadening and no 2D anisotropy.

Original languageEnglish (US)
Title of host publicationPhysics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B
Pages1317-1318
Number of pages2
DOIs
StatePublished - Dec 1 2007
Event28th International Conference on the Physics of Semiconductors, ICPS 2006 - Vienna, Austria
Duration: Jul 24 2006Jul 28 2006

Publication series

NameAIP Conference Proceedings
Volume893
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

Other28th International Conference on the Physics of Semiconductors, ICPS 2006
CountryAustria
CityVienna
Period7/24/067/28/06

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Keywords

  • Quantum dots
  • Spintronics

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