Spin relaxation in SiGe islands

H. Malissa; W. Jantsch; G. Chen; H. Lichtenberger; T. Fromherz; F. Schäffler; G. Bauer; A. Tyryshkin; S. Lyon; Z. Wilamowski

doi:10.1063/1.2730387

Spin relaxation in SiGe islands

H. Malissa, W. Jantsch, G. Chen, H. Lichtenberger, T. Fromherz, F. Schäffler, G. Bauer, A. Tyryshkin, S. Lyon, Z. Wilamowski

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

We investigate spin relaxation of electrons confined in SiGe structures produced by MBE growth of Ge islands on unstructured and structured Si substrates that cause strain in a Si layer above. These structures are investigated by photoluminescence spectroscopy and electron spin resonance both in continuous wave and pulsed mode. These structures show an ESR line-width and a g-factor of conduction electrons in Si with inhomogeneous broadening and no 2D anisotropy.

Original language	English (US)
Title of host publication	Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B
Pages	1317-1318
Number of pages	2
DOIs	https://doi.org/10.1063/1.2730387
State	Published - 2007
Event	28th International Conference on the Physics of Semiconductors, ICPS 2006 - Vienna, Austria Duration: Jul 24 2006 → Jul 28 2006

Publication series

Name	AIP Conference Proceedings
Volume	893
ISSN (Print)	0094-243X
ISSN (Electronic)	1551-7616

Other

Other	28th International Conference on the Physics of Semiconductors, ICPS 2006
Country/Territory	Austria
City	Vienna
Period	7/24/06 → 7/28/06

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

Keywords

Quantum dots
Spintronics

Access to Document

10.1063/1.2730387

Cite this

Malissa, H., Jantsch, W., Chen, G., Lichtenberger, H., Fromherz, T., Schäffler, F., Bauer, G., Tyryshkin, A., Lyon, S., & Wilamowski, Z. (2007). Spin relaxation in SiGe islands. In Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B (pp. 1317-1318). (AIP Conference Proceedings; Vol. 893). https://doi.org/10.1063/1.2730387

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title = "Spin relaxation in SiGe islands",

abstract = "We investigate spin relaxation of electrons confined in SiGe structures produced by MBE growth of Ge islands on unstructured and structured Si substrates that cause strain in a Si layer above. These structures are investigated by photoluminescence spectroscopy and electron spin resonance both in continuous wave and pulsed mode. These structures show an ESR line-width and a g-factor of conduction electrons in Si with inhomogeneous broadening and no 2D anisotropy.",

keywords = "Quantum dots, Spintronics",

author = "H. Malissa and W. Jantsch and G. Chen and H. Lichtenberger and T. Fromherz and F. Sch{\"a}ffler and G. Bauer and A. Tyryshkin and S. Lyon and Z. Wilamowski",

year = "2007",

doi = "10.1063/1.2730387",

language = "English (US)",

isbn = "9780735403970",

series = "AIP Conference Proceedings",

pages = "1317--1318",

booktitle = "Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B",

note = "28th International Conference on the Physics of Semiconductors, ICPS 2006 ; Conference date: 24-07-2006 Through 28-07-2006",

}

Malissa, H, Jantsch, W, Chen, G, Lichtenberger, H, Fromherz, T, Schäffler, F, Bauer, G, Tyryshkin, A, Lyon, S & Wilamowski, Z 2007, Spin relaxation in SiGe islands. in Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B. AIP Conference Proceedings, vol. 893, pp. 1317-1318, 28th International Conference on the Physics of Semiconductors, ICPS 2006, Vienna, Austria, 7/24/06. https://doi.org/10.1063/1.2730387

TY - GEN

T1 - Spin relaxation in SiGe islands

AU - Malissa, H.

AU - Jantsch, W.

AU - Chen, G.

AU - Lichtenberger, H.

AU - Fromherz, T.

AU - Schäffler, F.

AU - Bauer, G.

AU - Tyryshkin, A.

AU - Lyon, S.

AU - Wilamowski, Z.

PY - 2007

Y1 - 2007

N2 - We investigate spin relaxation of electrons confined in SiGe structures produced by MBE growth of Ge islands on unstructured and structured Si substrates that cause strain in a Si layer above. These structures are investigated by photoluminescence spectroscopy and electron spin resonance both in continuous wave and pulsed mode. These structures show an ESR line-width and a g-factor of conduction electrons in Si with inhomogeneous broadening and no 2D anisotropy.

AB - We investigate spin relaxation of electrons confined in SiGe structures produced by MBE growth of Ge islands on unstructured and structured Si substrates that cause strain in a Si layer above. These structures are investigated by photoluminescence spectroscopy and electron spin resonance both in continuous wave and pulsed mode. These structures show an ESR line-width and a g-factor of conduction electrons in Si with inhomogeneous broadening and no 2D anisotropy.

KW - Quantum dots

KW - Spintronics

UR - http://www.scopus.com/inward/record.url?scp=77958462573&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77958462573&partnerID=8YFLogxK

U2 - 10.1063/1.2730387

DO - 10.1063/1.2730387

M3 - Conference contribution

AN - SCOPUS:77958462573

SN - 9780735403970

T3 - AIP Conference Proceedings

SP - 1317

EP - 1318

BT - Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B

T2 - 28th International Conference on the Physics of Semiconductors, ICPS 2006

Y2 - 24 July 2006 through 28 July 2006

ER -

Spin relaxation in SiGe islands

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