TY - GEN
T1 - Spin relaxation in SiGe islands
AU - Malissa, Hans
AU - Jantsch, Wolfgang
AU - Chen, Gang
AU - Lichtenberger, Herbert
AU - Fromherz, Thomas
AU - Schäffler, Friedrich
AU - Bauer, Günther
AU - Tyryshkin, Alexei
AU - Lyon, Stephen Aplin
AU - Wilamowski, Zbyslaw
PY - 2007/7/4
Y1 - 2007/7/4
N2 - We present our work on the spin relaxation of electrons confined in SiGe islands. Ge islands are grown on unstructured and structured Si(100) substrates by MBE, and lead to strain in the Si layer that is deposited on top. These quantum dot structures are investigated by photoluminescence and electron spin resonance (ESR) experiments, the latter both in continuous wave and pulsed mode. We observe a g-factor and an ESR line width that correspond to Si conduction band electrons with additional inhomogeneous broadening.
AB - We present our work on the spin relaxation of electrons confined in SiGe islands. Ge islands are grown on unstructured and structured Si(100) substrates by MBE, and lead to strain in the Si layer that is deposited on top. These quantum dot structures are investigated by photoluminescence and electron spin resonance (ESR) experiments, the latter both in continuous wave and pulsed mode. We observe a g-factor and an ESR line width that correspond to Si conduction band electrons with additional inhomogeneous broadening.
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M3 - Conference contribution
AN - SCOPUS:34347255710
SN - 1558999159
SN - 9781558999152
T3 - Materials Research Society Symposium Proceedings
SP - 57
EP - 62
BT - Group IV Semiconductor Nanostructures-2006
T2 - 2006 MRS Fall Meeting
Y2 - 27 November 2006 through 1 December 2006
ER -