Spin relaxation in SiGe islands

Hans Malissa, Wolfgang Jantsch, Gang Chen, Herbert Lichtenberger, Thomas Fromherz, Friedrich Schäffler, Günther Bauer, Alexei Tyryshkin, Stephen Aplin Lyon, Zbyslaw Wilamowski

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We present our work on the spin relaxation of electrons confined in SiGe islands. Ge islands are grown on unstructured and structured Si(100) substrates by MBE, and lead to strain in the Si layer that is deposited on top. These quantum dot structures are investigated by photoluminescence and electron spin resonance (ESR) experiments, the latter both in continuous wave and pulsed mode. We observe a g-factor and an ESR line width that correspond to Si conduction band electrons with additional inhomogeneous broadening.

Original languageEnglish (US)
Title of host publicationGroup IV Semiconductor Nanostructures-2006
Pages57-62
Number of pages6
StatePublished - Jul 4 2007
Event2006 MRS Fall Meeting - Boston, MA, United States
Duration: Nov 27 2006Dec 1 2006

Publication series

NameMaterials Research Society Symposium Proceedings
Volume958
ISSN (Print)0272-9172

Other

Other2006 MRS Fall Meeting
CountryUnited States
CityBoston, MA
Period11/27/0612/1/06

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Malissa, H., Jantsch, W., Chen, G., Lichtenberger, H., Fromherz, T., Schäffler, F., Bauer, G., Tyryshkin, A., Lyon, S. A., & Wilamowski, Z. (2007). Spin relaxation in SiGe islands. In Group IV Semiconductor Nanostructures-2006 (pp. 57-62). (Materials Research Society Symposium Proceedings; Vol. 958).