Spin relaxation and g-factor of two-dimensional electrons in Si/SiGe quantum wells

Z. Wilamowski; W. Jantsch; N. Sandersfeld; M. Mühlberger; F. Schäffler; S. Lyon

doi:10.1016/S1386-9477(02)00582-9

Spin relaxation and g-factor of two-dimensional electrons in Si/SiGe quantum wells

Z. Wilamowski, W. Jantsch, N. Sandersfeld, M. Mühlberger, F. Schäffler, S. Lyon

Research output: Contribution to journal › Conference article › peer-review

19 Scopus citations

Abstract

We investigate spin relaxation and the g-factor of conduction electrons in modulation doped Si/SiGe quantum wells by means of electron spin resonance. We find that both the transverse- and the longitudinal relaxation times are of the order of microseconds, much longer than in III-V compounds. For high mobility, at carrier densities sufficiently far away from the metal-to-insulator transition, both quantities can be explained consistently in terms of the Bychkov-Rashba field, together with the g-factor anisotropy and its dependence on the carrier density. A single value of the BR coefficient, α_BR = 0.55 × 10^-12 eV cm, explains all data. This value is by more than three orders of magnitude smaller than for III-V compounds owing to the small spin-orbit coupling of Si. The properties found make Si/SiGe quantum structures interesting candidates for quantum computing.

Original language	English (US)
Pages (from-to)	111-120
Number of pages	10
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	16
Issue number	1
DOIs	https://doi.org/10.1016/S1386-9477(02)00582-9
State	Published - Jan 2003
Event	Proceedingsof the Twelfth International Winterschool on New - Mauterndorf, Austria Duration: Feb 25 2002 → Mar 1 2002

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

Keywords

Quantum computing
Spin coherence
Spin relaxation
Spin resonance

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10.1016/S1386-9477(02)00582-9

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title = "Spin relaxation and g-factor of two-dimensional electrons in Si/SiGe quantum wells",

abstract = "We investigate spin relaxation and the g-factor of conduction electrons in modulation doped Si/SiGe quantum wells by means of electron spin resonance. We find that both the transverse- and the longitudinal relaxation times are of the order of microseconds, much longer than in III-V compounds. For high mobility, at carrier densities sufficiently far away from the metal-to-insulator transition, both quantities can be explained consistently in terms of the Bychkov-Rashba field, together with the g-factor anisotropy and its dependence on the carrier density. A single value of the BR coefficient, αBR = 0.55 × 10-12 eV cm, explains all data. This value is by more than three orders of magnitude smaller than for III-V compounds owing to the small spin-orbit coupling of Si. The properties found make Si/SiGe quantum structures interesting candidates for quantum computing.",

keywords = "Quantum computing, Spin coherence, Spin relaxation, Spin resonance",

author = "Z. Wilamowski and W. Jantsch and N. Sandersfeld and M. M{\"u}hlberger and F. Sch{\"a}ffler and S. Lyon",

note = "Funding Information: Work supported by the Fonds zur F{\"o}rderung der Wissenschaftlichen Forschung , GMe {\"O}AD, all Vienna and within the PBZ/KBN/044/P03/2001 grant in Poland. ; Proceedingsof the Twelfth International Winterschool on New ; Conference date: 25-02-2002 Through 01-03-2002",

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doi = "10.1016/S1386-9477(02)00582-9",

language = "English (US)",

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TY - JOUR

T1 - Spin relaxation and g-factor of two-dimensional electrons in Si/SiGe quantum wells

AU - Wilamowski, Z.

AU - Jantsch, W.

AU - Sandersfeld, N.

AU - Mühlberger, M.

AU - Schäffler, F.

AU - Lyon, S.

N1 - Funding Information: Work supported by the Fonds zur Förderung der Wissenschaftlichen Forschung , GMe ÖAD, all Vienna and within the PBZ/KBN/044/P03/2001 grant in Poland.

PY - 2003/1

Y1 - 2003/1

N2 - We investigate spin relaxation and the g-factor of conduction electrons in modulation doped Si/SiGe quantum wells by means of electron spin resonance. We find that both the transverse- and the longitudinal relaxation times are of the order of microseconds, much longer than in III-V compounds. For high mobility, at carrier densities sufficiently far away from the metal-to-insulator transition, both quantities can be explained consistently in terms of the Bychkov-Rashba field, together with the g-factor anisotropy and its dependence on the carrier density. A single value of the BR coefficient, αBR = 0.55 × 10-12 eV cm, explains all data. This value is by more than three orders of magnitude smaller than for III-V compounds owing to the small spin-orbit coupling of Si. The properties found make Si/SiGe quantum structures interesting candidates for quantum computing.

AB - We investigate spin relaxation and the g-factor of conduction electrons in modulation doped Si/SiGe quantum wells by means of electron spin resonance. We find that both the transverse- and the longitudinal relaxation times are of the order of microseconds, much longer than in III-V compounds. For high mobility, at carrier densities sufficiently far away from the metal-to-insulator transition, both quantities can be explained consistently in terms of the Bychkov-Rashba field, together with the g-factor anisotropy and its dependence on the carrier density. A single value of the BR coefficient, αBR = 0.55 × 10-12 eV cm, explains all data. This value is by more than three orders of magnitude smaller than for III-V compounds owing to the small spin-orbit coupling of Si. The properties found make Si/SiGe quantum structures interesting candidates for quantum computing.

KW - Quantum computing

KW - Spin coherence

KW - Spin relaxation

KW - Spin resonance

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DO - 10.1016/S1386-9477(02)00582-9

M3 - Conference article

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SN - 1386-9477

VL - 16

SP - 111

EP - 120

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 1

T2 - Proceedingsof the Twelfth International Winterschool on New

Y2 - 25 February 2002 through 1 March 2002

ER -

Spin relaxation and g-factor of two-dimensional electrons in Si/SiGe quantum wells

Abstract

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