Spin relaxation and g-factor of two-dimensional electrons in Si/SiGe quantum wells

Z. Wilamowski, W. Jantsch, N. Sandersfeld, M. Mühlberger, F. Schäffler, S. Lyon

Research output: Contribution to journalConference articlepeer-review

19 Scopus citations


We investigate spin relaxation and the g-factor of conduction electrons in modulation doped Si/SiGe quantum wells by means of electron spin resonance. We find that both the transverse- and the longitudinal relaxation times are of the order of microseconds, much longer than in III-V compounds. For high mobility, at carrier densities sufficiently far away from the metal-to-insulator transition, both quantities can be explained consistently in terms of the Bychkov-Rashba field, together with the g-factor anisotropy and its dependence on the carrier density. A single value of the BR coefficient, αBR = 0.55 × 10-12 eV cm, explains all data. This value is by more than three orders of magnitude smaller than for III-V compounds owing to the small spin-orbit coupling of Si. The properties found make Si/SiGe quantum structures interesting candidates for quantum computing.

Original languageEnglish (US)
Pages (from-to)111-120
Number of pages10
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Issue number1
StatePublished - Jan 2003
EventProceedingsof the Twelfth International Winterschool on New - Mauterndorf, Austria
Duration: Feb 25 2002Mar 1 2002

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics


  • Quantum computing
  • Spin coherence
  • Spin relaxation
  • Spin resonance


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