Spin relaxation and donor-acceptor recombination of Se+ in 28-silicon

Roberto Lo Nardo, Gary Wolfowicz, Stephanie Simmons, Alexei M. Tyryshkin, Helge Riemann, Nikolai V. Abrosimov, Peter Becker, Hans Joachim Pohl, Michael Steger, Stephen A. Lyon, Mike L.W. Thewalt, John J.L. Morton

Research output: Contribution to journalArticlepeer-review

12 Scopus citations


Selenium impurities in silicon are deep double donors and their optical and electronic properties have been recently investigated due to their application for infrared detection. However, a singly ionized selenium donor (Se+) possesses an electron spin which makes it a potential candidate as a silicon-based spin qubit, with significant potential advantages compared to the more commonly studied group V donors. Here we study the electron spin relaxation (T1) and coherence (T2) times of Se+ in isotopically purified 28-silicon, and find them to be up to two orders of magnitude longer than shallow group V donors at temperatures above ∼15K. We further study the dynamics of donor-acceptor recombination between selenium and boron, demonstrating that it is possible to control the donor charge state through optical excitation of neutral Se0.

Original languageEnglish (US)
Article number165201
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number16
StatePublished - Oct 7 2015

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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