Spin relaxation and donor-acceptor recombination of Se+ in 28-silicon

Roberto Lo Nardo; Gary Wolfowicz; Stephanie Simmons; Alexei M. Tyryshkin; Helge Riemann; Nikolai V. Abrosimov; Peter Becker; Hans Joachim Pohl; Michael Steger; Stephen A. Lyon; Mike L.W. Thewalt; John J.L. Morton

doi:10.1103/PhysRevB.92.165201

Spin relaxation and donor-acceptor recombination of Se+ in 28-silicon

Roberto Lo Nardo, Gary Wolfowicz, Stephanie Simmons, Alexei M. Tyryshkin, Helge Riemann, Nikolai V. Abrosimov, Peter Becker, Hans Joachim Pohl, Michael Steger, Stephen A. Lyon, Mike L.W. Thewalt, John J.L. Morton

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Abstract

Selenium impurities in silicon are deep double donors and their optical and electronic properties have been recently investigated due to their application for infrared detection. However, a singly ionized selenium donor (Se+) possesses an electron spin which makes it a potential candidate as a silicon-based spin qubit, with significant potential advantages compared to the more commonly studied group V donors. Here we study the electron spin relaxation (T1) and coherence (T2) times of Se+ in isotopically purified 28-silicon, and find them to be up to two orders of magnitude longer than shallow group V donors at temperatures above ∼15K. We further study the dynamics of donor-acceptor recombination between selenium and boron, demonstrating that it is possible to control the donor charge state through optical excitation of neutral Se0.

Original language	English (US)
Article number	165201
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	92
Issue number	16
DOIs	https://doi.org/10.1103/PhysRevB.92.165201
State	Published - Oct 7 2015

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1103/PhysRevB.92.165201

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Lo Nardo, R., Wolfowicz, G., Simmons, S., Tyryshkin, A. M., Riemann, H., Abrosimov, N. V., Becker, P., Pohl, H. J., Steger, M., Lyon, S. A., Thewalt, M. L. W., & Morton, J. J. L. (2015). Spin relaxation and donor-acceptor recombination of Se+ in 28-silicon. Physical Review B - Condensed Matter and Materials Physics, 92(16), Article 165201. https://doi.org/10.1103/PhysRevB.92.165201

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title = "Spin relaxation and donor-acceptor recombination of Se+ in 28-silicon",

abstract = "Selenium impurities in silicon are deep double donors and their optical and electronic properties have been recently investigated due to their application for infrared detection. However, a singly ionized selenium donor (Se+) possesses an electron spin which makes it a potential candidate as a silicon-based spin qubit, with significant potential advantages compared to the more commonly studied group V donors. Here we study the electron spin relaxation (T1) and coherence (T2) times of Se+ in isotopically purified 28-silicon, and find them to be up to two orders of magnitude longer than shallow group V donors at temperatures above ∼15K. We further study the dynamics of donor-acceptor recombination between selenium and boron, demonstrating that it is possible to control the donor charge state through optical excitation of neutral Se0.",

author = "{Lo Nardo}, Roberto and Gary Wolfowicz and Stephanie Simmons and Tyryshkin, {Alexei M.} and Helge Riemann and Abrosimov, {Nikolai V.} and Peter Becker and Pohl, {Hans Joachim} and Michael Steger and Lyon, {Stephen A.} and Thewalt, {Mike L.W.} and Morton, {John J.L.}",

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doi = "10.1103/PhysRevB.92.165201",

language = "English (US)",

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T1 - Spin relaxation and donor-acceptor recombination of Se+ in 28-silicon

AU - Lo Nardo, Roberto

AU - Wolfowicz, Gary

AU - Simmons, Stephanie

AU - Tyryshkin, Alexei M.

AU - Riemann, Helge

AU - Abrosimov, Nikolai V.

AU - Becker, Peter

AU - Pohl, Hans Joachim

AU - Steger, Michael

AU - Lyon, Stephen A.

AU - Thewalt, Mike L.W.

AU - Morton, John J.L.

PY - 2015/10/7

Y1 - 2015/10/7

N2 - Selenium impurities in silicon are deep double donors and their optical and electronic properties have been recently investigated due to their application for infrared detection. However, a singly ionized selenium donor (Se+) possesses an electron spin which makes it a potential candidate as a silicon-based spin qubit, with significant potential advantages compared to the more commonly studied group V donors. Here we study the electron spin relaxation (T1) and coherence (T2) times of Se+ in isotopically purified 28-silicon, and find them to be up to two orders of magnitude longer than shallow group V donors at temperatures above ∼15K. We further study the dynamics of donor-acceptor recombination between selenium and boron, demonstrating that it is possible to control the donor charge state through optical excitation of neutral Se0.

AB - Selenium impurities in silicon are deep double donors and their optical and electronic properties have been recently investigated due to their application for infrared detection. However, a singly ionized selenium donor (Se+) possesses an electron spin which makes it a potential candidate as a silicon-based spin qubit, with significant potential advantages compared to the more commonly studied group V donors. Here we study the electron spin relaxation (T1) and coherence (T2) times of Se+ in isotopically purified 28-silicon, and find them to be up to two orders of magnitude longer than shallow group V donors at temperatures above ∼15K. We further study the dynamics of donor-acceptor recombination between selenium and boron, demonstrating that it is possible to control the donor charge state through optical excitation of neutral Se0.

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DO - 10.1103/PhysRevB.92.165201

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JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 16

M1 - 165201

ER -

Spin relaxation and donor-acceptor recombination of Se+ in 28-silicon

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