Skip to main navigation
Skip to search
Skip to main content
Princeton University Home
Help & FAQ
Home
Profiles
Research units
Facilities
Projects
Research output
Press/Media
Search by expertise, name or affiliation
Spin-polarized tunneling in hybrid metal-semiconductor magnetic tunnel junctions
S. H. Chun
, S. J. Potashnik
, K. C. Ku
,
P. Schiffer
, N. Samarth
Research output
:
Contribution to journal
›
Article
›
peer-review
Overview
Fingerprint
Fingerprint
Dive into the research topics of 'Spin-polarized tunneling in hybrid metal-semiconductor magnetic tunnel junctions'. Together they form a unique fingerprint.
Sort by
Weight
Alphabetically
Keyphrases
Low Temperature
100%
Magnetic Tunnel Junction
100%
Metal-semiconductor-metal
100%
Ferromagnetic Metal
100%
Spin-dependent Tunneling
100%
Ferromagnetic Semiconductor
100%
MnAs
100%
High Efficiency
50%
Epitaxial
50%
Gallium Arsenide
50%
Conductance
50%
Density of States
50%
Zero Bias
50%
Current-voltage Characteristics
50%
Heterostructure
50%
Tunneling Magnetoresistance
50%
Voltage Characteristics
50%
Non-magnetic Semiconductors
50%
Tunnel Barrier
50%
Tunnel Junction
50%
Spin Injection
50%
Conductance-voltage
50%
Material Science
Ferromagnetic Material
100%
Magnetic Semiconductor
100%
Gallium Arsenide
50%
Density
50%
Heterojunction
50%
Current Voltage Characteristics
50%
Tunneling Magnetoresistance
50%
Physics
Tunnel Junction
100%
Density of States
33%
Tunneling Magnetoresistance
33%