Spin-polarized tunneling in hybrid metal-semiconductor magnetic tunnel junctions

Keyphrases

• Low Temperature 100%
• Magnetic Tunnel Junction 100%
• Metal-semiconductor-metal 100%
• Ferromagnetic Metal 100%
• Spin-dependent Tunneling 100%
• Ferromagnetic Semiconductor 100%
• MnAs 100%
• High Efficiency 50%
• Epitaxial 50%
• Gallium Arsenide 50%
• Conductance 50%
• Density of States 50%
• Zero Bias 50%
• Current-voltage Characteristics 50%
• Heterostructure 50%
• Tunneling Magnetoresistance 50%
• Voltage Characteristics 50%
• Non-magnetic Semiconductors 50%
• Tunnel Barrier 50%
• Tunnel Junction 50%
• Spin Injection 50%
• Conductance-voltage 50%

Material Science

• Ferromagnetic Material 100%
• Magnetic Semiconductor 100%
• Gallium Arsenide 50%
• Density 50%
• Heterojunction 50%
• Current Voltage Characteristics 50%
• Tunneling Magnetoresistance 50%

Physics

• Tunnel Junction 100%
• Density of States 33%
• Tunneling Magnetoresistance 33%