Spin-polarized tunneling in hybrid metal-semiconductor magnetic tunnel junctions

S. H. Chun; S. J. Potashnik; K. C. Ku; P. Schiffer; N. Samarth

doi:10.1103/PhysRevB.66.100408

Spin-polarized tunneling in hybrid metal-semiconductor magnetic tunnel junctions

S. H. Chun, S. J. Potashnik, K. C. Ku, P. Schiffer, N. Samarth

Research output: Contribution to journal › Article › peer-review

Abstract

We demonstrate efficient spin-polarized tunneling between a ferromagnetic metal and a ferromagnetic semiconductor with highly mismatched conductivities. This is indicated by a large tunneling magnetoresistance (up to 30%) at low temperatures in epitaxial magnetic tunnel junctions composed of a ferromagnetic metal (MnAs) and a ferromagnetic semiconductor (formula presented) separated by a nonmagnetic semiconductor (AlAs). Analysis of the current-voltage characteristics yields detailed information about the asymmetric tunnel barrier. The low temperature conductance-voltage characteristics show a zero bias anomaly and a (formula presented) dependence of the conductance, suggesting a correlation gap in the density of states of (formula presented) These experiments suggest that MnAs/AlAs heterostructures offer well characterized tunnel junctions for high efficiency spin injection into GaAs.

Original language	English (US)
Pages (from-to)	1-4
Number of pages	4
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	66
Issue number	10
DOIs	https://doi.org/10.1103/PhysRevB.66.100408
State	Published - 2002
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1103/PhysRevB.66.100408

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title = "Spin-polarized tunneling in hybrid metal-semiconductor magnetic tunnel junctions",

abstract = "We demonstrate efficient spin-polarized tunneling between a ferromagnetic metal and a ferromagnetic semiconductor with highly mismatched conductivities. This is indicated by a large tunneling magnetoresistance (up to 30%) at low temperatures in epitaxial magnetic tunnel junctions composed of a ferromagnetic metal (MnAs) and a ferromagnetic semiconductor (formula presented) separated by a nonmagnetic semiconductor (AlAs). Analysis of the current-voltage characteristics yields detailed information about the asymmetric tunnel barrier. The low temperature conductance-voltage characteristics show a zero bias anomaly and a (formula presented) dependence of the conductance, suggesting a correlation gap in the density of states of (formula presented) These experiments suggest that MnAs/AlAs heterostructures offer well characterized tunnel junctions for high efficiency spin injection into GaAs.",

author = "Chun, {S. H.} and Potashnik, {S. J.} and Ku, {K. C.} and P. Schiffer and N. Samarth",

year = "2002",

doi = "10.1103/PhysRevB.66.100408",

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T1 - Spin-polarized tunneling in hybrid metal-semiconductor magnetic tunnel junctions

AU - Chun, S. H.

AU - Potashnik, S. J.

AU - Ku, K. C.

AU - Schiffer, P.

AU - Samarth, N.

PY - 2002

Y1 - 2002

N2 - We demonstrate efficient spin-polarized tunneling between a ferromagnetic metal and a ferromagnetic semiconductor with highly mismatched conductivities. This is indicated by a large tunneling magnetoresistance (up to 30%) at low temperatures in epitaxial magnetic tunnel junctions composed of a ferromagnetic metal (MnAs) and a ferromagnetic semiconductor (formula presented) separated by a nonmagnetic semiconductor (AlAs). Analysis of the current-voltage characteristics yields detailed information about the asymmetric tunnel barrier. The low temperature conductance-voltage characteristics show a zero bias anomaly and a (formula presented) dependence of the conductance, suggesting a correlation gap in the density of states of (formula presented) These experiments suggest that MnAs/AlAs heterostructures offer well characterized tunnel junctions for high efficiency spin injection into GaAs.

AB - We demonstrate efficient spin-polarized tunneling between a ferromagnetic metal and a ferromagnetic semiconductor with highly mismatched conductivities. This is indicated by a large tunneling magnetoresistance (up to 30%) at low temperatures in epitaxial magnetic tunnel junctions composed of a ferromagnetic metal (MnAs) and a ferromagnetic semiconductor (formula presented) separated by a nonmagnetic semiconductor (AlAs). Analysis of the current-voltage characteristics yields detailed information about the asymmetric tunnel barrier. The low temperature conductance-voltage characteristics show a zero bias anomaly and a (formula presented) dependence of the conductance, suggesting a correlation gap in the density of states of (formula presented) These experiments suggest that MnAs/AlAs heterostructures offer well characterized tunnel junctions for high efficiency spin injection into GaAs.

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Spin-polarized tunneling in hybrid metal-semiconductor magnetic tunnel junctions

Abstract

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