Abstract
We have made quantitative measurements of the spin polarization of two-dimensional (2D) GaAs (1 0 0) electrons and GaAs (3 1 1)A holes, as a function of an in-plane magnetic field. The functional form of the in-plane magnetoresistance is shown to be intimately related to the spin polarization. Moreover, for three different 2D systems, namely GaAs (1 0 0) electrons, GaAs (3 1 1)A holes, and AlAs (4 1 1)B electrons, the temperature dependence of the in-plane magnetoresistance reveals that their behavior turns from metallic to insulating before they are fully spin polarized.
Original language | English (US) |
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Pages (from-to) | 748-751 |
Number of pages | 4 |
Journal | Physica E: Low-Dimensional Systems and Nanostructures |
Volume | 13 |
Issue number | 2-4 |
DOIs | |
State | Published - Mar 2002 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
Keywords
- 2D system
- Metal-insulator transition
- Zeeman energy