Spin polarization and transition from metallic to insulating behavior in 2D systems

E. Tutuc, E. P. De Poortere, S. J. Papadakis, M. Shayegan

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

We have made quantitative measurements of the spin polarization of two-dimensional (2D) GaAs (1 0 0) electrons and GaAs (3 1 1)A holes, as a function of an in-plane magnetic field. The functional form of the in-plane magnetoresistance is shown to be intimately related to the spin polarization. Moreover, for three different 2D systems, namely GaAs (1 0 0) electrons, GaAs (3 1 1)A holes, and AlAs (4 1 1)B electrons, the temperature dependence of the in-plane magnetoresistance reveals that their behavior turns from metallic to insulating before they are fully spin polarized.

Original languageEnglish (US)
Pages (from-to)748-751
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume13
Issue number2-4
DOIs
StatePublished - Mar 1 2002

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

Keywords

  • 2D system
  • Metal-insulator transition
  • Zeeman energy

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