Spin-orbit interaction and transport in GaAs two-dimensional holes

B. Habib, Mansour Shayegan, R. Winkler

Research output: Contribution to journalArticle

19 Scopus citations

Abstract

We present quantitative measurements and calculations of the spin-orbit-induced zero magnetic field spin-splitting in GaAs two-dimensional hole systems. The magneto-resistance oscillations in this system show a clear beating pattern which results from the unequal densities of the two spin subbands. We present a Fourier analysis technique that de-convolves the magneto-oscillations of the two subbands. The temperature dependence of the de-convolved oscillations allows us to deduce the effective masses of the subbands without assuming parabolic dispersions for the two subbands. Next, we demonstrate that heavy hole systems in heterostructures exhibit a decrease in spin-splitting with an increase in perpendicular electric field. Our results are in contrast to the more familiar case of electrons where spin-splitting increases with electric field. Another external parameter that effects spin-splitting is strain. We report direct measurements of the spin-orbit interaction-induced spin-splitting in a hole system as a function of anisotropic, in-plane strain. In addition, our piezoresistance measurements reveal a strong dependence on density and the direction along which the resistance is measured. In the end, we present Aharonov-Bohm resistance oscillations in a shallow two-dimensional GaAs hole ring structure, defined by local anodic surface oxidation. The amplitude of the oscillations is about 10% of the ring resistance, the strongest seen in a hole system.

Original languageEnglish (US)
Article number064002
JournalSemiconductor Science and Technology
Volume24
Issue number6
DOIs
StatePublished - Jun 10 2009

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Condensed Matter Physics

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