Spin manipulation of free two-dimensional electrons in Si/SiGe quantum wells

A. M. Tyryshkin, S. A. Lyon, W. Jantsch, F. Schäffler

Research output: Contribution to journalArticlepeer-review

93 Scopus citations


Understanding the mechanisms controlling the spin coherence of electrons in semiconductors is essential for designing structures for quantum computing applications. Using a pulsed electron paramagnetic resonance spectrometer, we measure spin echoes and deduce a spin coherence time (T2) of up to 3 μs for an ensemble of free two-dimensional electrons confined in a Si/SiGe quantum well. The decoherence can be understood in terms of momentum scattering causing fluctuating effective Rashba fields. Further confining the electrons into a nondegenerate (other than spin) ground state of a quantum dot can be expected to eliminate this decoherence mechanism.

Original languageEnglish (US)
Article number126802
JournalPhysical review letters
Issue number12
StatePublished - Apr 1 2005

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy


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