Spin dependent transport in hybrid magnetic tunnel junctions

S. H. Chun; S. J. Potashnik; K. C. Ku; P. Schiffer; N. Samarth

Spin dependent transport in hybrid magnetic tunnel junctions

S. H. Chun, S. J. Potashnik, K. C. Ku, P. Schiffer, N. Samarth

Research output: Contribution to journal › Conference article › peer-review

Abstract

A large tunneling magnetoresistance was observed in epitaxial hybrid magnetic tunnel junctions composed of MnAs/AlAs/GaMnAs. The low temperature current-voltage characteristics were in accord with those of a tunneling process through an asymmetric barrier. These experiments confirm that efficient spin injection from metals into semiconductors is possible when a suitable tunnel barrier is used.

Original language	English (US)
Pages (from-to)	131-134
Number of pages	4
Journal	Institute of Physics Conference Series
Volume	184
State	Published - 2005
Externally published	Yes
Event	31st International Symposium of Compound Semiconductors 2004 - Seoul, Korea, Republic of Duration: Sep 12 2004 → Dec 16 2004

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

Cite this

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title = "Spin dependent transport in hybrid magnetic tunnel junctions",

abstract = "A large tunneling magnetoresistance was observed in epitaxial hybrid magnetic tunnel junctions composed of MnAs/AlAs/GaMnAs. The low temperature current-voltage characteristics were in accord with those of a tunneling process through an asymmetric barrier. These experiments confirm that efficient spin injection from metals into semiconductors is possible when a suitable tunnel barrier is used.",

author = "Chun, {S. H.} and Potashnik, {S. J.} and Ku, {K. C.} and P. Schiffer and N. Samarth",

year = "2005",

language = "English (US)",

volume = "184",

pages = "131--134",

journal = "Institute of Physics Conference Series",

issn = "0951-3248",

publisher = "IOP Publishing Ltd.",

note = "31st International Symposium of Compound Semiconductors 2004 ; Conference date: 12-09-2004 Through 16-12-2004",

}

TY - JOUR

T1 - Spin dependent transport in hybrid magnetic tunnel junctions

AU - Chun, S. H.

AU - Potashnik, S. J.

AU - Ku, K. C.

AU - Schiffer, P.

AU - Samarth, N.

PY - 2005

Y1 - 2005

N2 - A large tunneling magnetoresistance was observed in epitaxial hybrid magnetic tunnel junctions composed of MnAs/AlAs/GaMnAs. The low temperature current-voltage characteristics were in accord with those of a tunneling process through an asymmetric barrier. These experiments confirm that efficient spin injection from metals into semiconductors is possible when a suitable tunnel barrier is used.

AB - A large tunneling magnetoresistance was observed in epitaxial hybrid magnetic tunnel junctions composed of MnAs/AlAs/GaMnAs. The low temperature current-voltage characteristics were in accord with those of a tunneling process through an asymmetric barrier. These experiments confirm that efficient spin injection from metals into semiconductors is possible when a suitable tunnel barrier is used.

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UR - http://www.scopus.com/inward/citedby.url?scp=33644585484&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:33644585484

SN - 0951-3248

VL - 184

SP - 131

EP - 134

JO - Institute of Physics Conference Series

JF - Institute of Physics Conference Series

T2 - 31st International Symposium of Compound Semiconductors 2004

Y2 - 12 September 2004 through 16 December 2004

ER -

Spin dependent transport in hybrid magnetic tunnel junctions

Abstract

All Science Journal Classification (ASJC) codes

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