Spin-dependent scattering off neutral antimony donors in Si28 field-effect transistors

C. C. Lo; J. Bokor; T. Schenkel; A. M. Tyryshkin; S. A. Lyon

doi:10.1063/1.2817966

Spin-dependent scattering off neutral antimony donors in Si28 field-effect transistors

C. C. Lo, J. Bokor, T. Schenkel, A. M. Tyryshkin, S. A. Lyon

Research output: Contribution to journal › Article › peer-review

40 Scopus citations

Abstract

We report measurements of spin-dependent scattering of conduction electrons by neutral donors in accumulation-mode field-effect transistors formed in isotopically enriched silicon. Spin-dependent scattering was detected using electrically detected magnetic resonance where spectra show resonant changes in the source-drain voltage for conduction electrons and electrons bound to donors. We discuss the utilization of spin-dependent scattering for the readout of donor spin states in silicon based quantum computers.

Original language	English (US)
Article number	242106
Journal	Applied Physics Letters
Volume	91
Issue number	24
DOIs	https://doi.org/10.1063/1.2817966
State	Published - 2007

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.2817966

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title = "Spin-dependent scattering off neutral antimony donors in Si28 field-effect transistors",

abstract = "We report measurements of spin-dependent scattering of conduction electrons by neutral donors in accumulation-mode field-effect transistors formed in isotopically enriched silicon. Spin-dependent scattering was detected using electrically detected magnetic resonance where spectra show resonant changes in the source-drain voltage for conduction electrons and electrons bound to donors. We discuss the utilization of spin-dependent scattering for the readout of donor spin states in silicon based quantum computers.",

author = "Lo, {C. C.} and J. Bokor and T. Schenkel and Tyryshkin, {A. M.} and Lyon, {S. A.}",

note = "Funding Information: The authors thank R. de Sousa for helpful discussions. This work was supported by the National Security Agency under MOD 713106A, the Department of Energy under Contract No. DE-AC02-05CH11231, the National Science Foundation under Grant No. 0404208, and the Nanoelectronics Research Initiative-Western Institute of Nanoelectronics. The support in device fabrication by the UC Berkeley Microlab staff is gratefully acknowledged. ",

year = "2007",

doi = "10.1063/1.2817966",

language = "English (US)",

volume = "91",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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T1 - Spin-dependent scattering off neutral antimony donors in Si28 field-effect transistors

AU - Lo, C. C.

AU - Bokor, J.

AU - Schenkel, T.

AU - Tyryshkin, A. M.

AU - Lyon, S. A.

N1 - Funding Information: The authors thank R. de Sousa for helpful discussions. This work was supported by the National Security Agency under MOD 713106A, the Department of Energy under Contract No. DE-AC02-05CH11231, the National Science Foundation under Grant No. 0404208, and the Nanoelectronics Research Initiative-Western Institute of Nanoelectronics. The support in device fabrication by the UC Berkeley Microlab staff is gratefully acknowledged.

PY - 2007

Y1 - 2007

N2 - We report measurements of spin-dependent scattering of conduction electrons by neutral donors in accumulation-mode field-effect transistors formed in isotopically enriched silicon. Spin-dependent scattering was detected using electrically detected magnetic resonance where spectra show resonant changes in the source-drain voltage for conduction electrons and electrons bound to donors. We discuss the utilization of spin-dependent scattering for the readout of donor spin states in silicon based quantum computers.

AB - We report measurements of spin-dependent scattering of conduction electrons by neutral donors in accumulation-mode field-effect transistors formed in isotopically enriched silicon. Spin-dependent scattering was detected using electrically detected magnetic resonance where spectra show resonant changes in the source-drain voltage for conduction electrons and electrons bound to donors. We discuss the utilization of spin-dependent scattering for the readout of donor spin states in silicon based quantum computers.

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DO - 10.1063/1.2817966

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VL - 91

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

M1 - 242106

ER -

Spin-dependent scattering off neutral antimony donors in Si28 field-effect transistors

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