Spin-dependent scattering off neutral antimony donors in Si28 field-effect transistors

C. C. Lo, J. Bokor, T. Schenkel, A. M. Tyryshkin, S. A. Lyon

Research output: Contribution to journalArticle

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Abstract

We report measurements of spin-dependent scattering of conduction electrons by neutral donors in accumulation-mode field-effect transistors formed in isotopically enriched silicon. Spin-dependent scattering was detected using electrically detected magnetic resonance where spectra show resonant changes in the source-drain voltage for conduction electrons and electrons bound to donors. We discuss the utilization of spin-dependent scattering for the readout of donor spin states in silicon based quantum computers.

Original languageEnglish (US)
Article number242106
JournalApplied Physics Letters
Volume91
Issue number24
DOIs
StatePublished - 2007

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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