Spin coherence in Si and applications to quantum information processing

Stephen Aplin Lyon, A. M. Tyryshkin, Jianhua He, R. M. Jock

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

While Si and Si-based materials have dominated classical electronic device technology for 50 years, quantum information processing requires very different types of devices. Silicon has also been found to be an ideal host for long-coherence quantum bits, or qubits, which are based upon the spins of electrons. The spins of electrons bound to donor impurities in isotopically enriched 28Si have been shown to have coherence times of 10 seconds or longer, at least three orders of magnitude longer than in any other solid. Considerable progress also is being made in understanding decoherence processes and extending coherence times for electrons at hetero-interfaces and in quantum dots.

Original languageEnglish (US)
Title of host publicationSiGe, Ge, and Related Compounds 5
Subtitle of host publicationMaterials, Processing, and Devices
Pages647-654
Number of pages8
Edition9
DOIs
StatePublished - Dec 1 2012
Event5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting - Honolulu, HI, United States
Duration: Oct 7 2012Oct 12 2012

Publication series

NameECS Transactions
Number9
Volume50
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting
CountryUnited States
CityHonolulu, HI
Period10/7/1210/12/12

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Fingerprint Dive into the research topics of 'Spin coherence in Si and applications to quantum information processing'. Together they form a unique fingerprint.

  • Cite this

    Lyon, S. A., Tyryshkin, A. M., He, J., & Jock, R. M. (2012). Spin coherence in Si and applications to quantum information processing. In SiGe, Ge, and Related Compounds 5: Materials, Processing, and Devices (9 ed., pp. 647-654). (ECS Transactions; Vol. 50, No. 9). https://doi.org/10.1149/05009.0647ecst