Abstract
We present a model for predicting film thickness profiles around topographical features during spin coating. This model is applicable to features of arbitrary geometry in the two lateral dimensions. This generality permits study ofthe planarization of real device structures, including both isolated and neighboring features, with any orientation withrespect to the wafer center. Predictions from this model agree qualitatively with measured film profiles from interferograms taken during spinning. Phenomena such as “pile-up” and “wakes” result from interactionsbetween surface tension and other driving forces in the flow.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 72-76 |
| Number of pages | 5 |
| Journal | IEEE Transactions on Semiconductor Manufacturing |
| Volume | 6 |
| Issue number | 1 |
| DOIs | |
| State | Published - Feb 1993 |
| Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Industrial and Manufacturing Engineering
- Electrical and Electronic Engineering