Spherical deformation of compliant substrates with semiconductor device islands

The ability to plastically deform thin-film semiconductor structures on deformable substrates to spherical cap shapes without cracking the semiconductor layers was discussed. The patterning of amorophous silicon and silicon nitride layers into islands was studied. It was found that the strain in the device islands after deformation was a function of the island structure, size and substrate material properties. Analysis showed that although the substrate was plastically expanded to a spherical dome, device islands experienced either tension or compression depending on the structure.