Speedup of doping fronts in organic semiconductors through plasma instability

V. Bychkov, P. Matyba, V. Akkerman, M. Modestov, D. Valiev, G. Brodin, Chung King Law, M. Marklund, L. Edman

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Abstract

The dynamics of doping transformation fronts in organic semiconductor plasma is studied for application in light-emitting electrochemical cells. We show that new fundamental effects of the plasma dynamics can significantly improve the device performance. We obtain an electrodynamic instability, which distorts the doping fronts and increases the transformation rate considerably. We explain the physical mechanism of the instability, develop theory, provide experimental evidence, perform numerical simulations, and demonstrate how the instability strength may be amplified technologically. The electrodynamic plasma instability obtained also shows interesting similarity to the hydrodynamic Darrieus-Landau instability in combustion, laser ablation, and astrophysics.

Original languageEnglish (US)
Article number016103
JournalPhysical review letters
Volume107
Issue number1
DOIs
StatePublished - Jun 30 2011

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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    Bychkov, V., Matyba, P., Akkerman, V., Modestov, M., Valiev, D., Brodin, G., Law, C. K., Marklund, M., & Edman, L. (2011). Speedup of doping fronts in organic semiconductors through plasma instability. Physical review letters, 107(1), [016103]. https://doi.org/10.1103/PhysRevLett.107.016103