TY - JOUR
T1 - Spectroscopy of hot carriers in semiconductors
AU - Lyon, S. A.
N1 - Funding Information:
The author would like to thank many co!-leagues, including P.M. Fauchet, D.L. Smith, D.C. Tsui, C.H. Yang, and especially J.M. Worlock for many enlightening discussions, and D.L. Smith and A. Redondo for reading the manuscript. He would also like to acknowledge the financial support of the Defense Advanced Research Projects Agency through the Office of Naval Research (Contract No. N00014-83-K-0739), and RCA, the GE Foundation, the Ford Motor Co., Varian Associates, and the National Science Foundation through the Presidential Young Investigator program (Contract No. ECS8351620).
PY - 1986/6
Y1 - 1986/6
N2 - We review the use of optical spectroscopy for the study of hot carrier relaxation in semiconductors. Results for direct-gap semiconductors, especially GaAs, and also recent studies of hot carriers in quantum wells are emphasized. Steady-state and time-resolved experiments are reviewed. These include both hot luminescence and absorption measurements. We also discuss theoretical aspects of hot carrier relaxation, including electron-electron and electron-phonon scattering, screening of the electron-phonon interaction, and the role of nonequilibrium phonons.
AB - We review the use of optical spectroscopy for the study of hot carrier relaxation in semiconductors. Results for direct-gap semiconductors, especially GaAs, and also recent studies of hot carriers in quantum wells are emphasized. Steady-state and time-resolved experiments are reviewed. These include both hot luminescence and absorption measurements. We also discuss theoretical aspects of hot carrier relaxation, including electron-electron and electron-phonon scattering, screening of the electron-phonon interaction, and the role of nonequilibrium phonons.
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U2 - 10.1016/0022-2313(86)90066-9
DO - 10.1016/0022-2313(86)90066-9
M3 - Review article
AN - SCOPUS:0001607523
SN - 0022-2313
VL - 35
SP - 121
EP - 154
JO - Journal of Luminescence
JF - Journal of Luminescence
IS - 3
ER -