Spectroscopic studies of low dimensional electron and hole systems in high quality GaAs-AlGaAs micro-structures

V. A. Stadnik; B. E. Kane; R. G. Clark; L. N. Pfeiffer; K. W. West

Spectroscopic studies of low dimensional electron and hole systems in high quality GaAs-AlGaAs micro-structures

V. A. Stadnik, B. E. Kane, R. G. Clark, L. N. Pfeiffer, K. W. West

Research output: Contribution to conference › Paper › peer-review

Abstract

A highly sensitive photoconductivity (PC) technique has been applied to undoped GaAs-AlGaAs micro-structures with either a single interface or a single quantum well and a gate-controlled variable density of electrons or holes. In zero magnetic field measurements we have found a wide absorption band below the fundamental gap of bulk GaAs, which correlates with the population of 2D states. The PC technique has potential for spectroscopic studies of semiconductor nano-structures, such as quantum wire devices, which present difficulties for other conventional spectroscopy methods.

Original language	English (US)
Pages	361-364
Number of pages	4
State	Published - 1996
Externally published	Yes
Event	Proceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD - Canberra, Aust Duration: Dec 8 1996 → Dec 11 1996

Conference

Conference	Proceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD
City	Canberra, Aust
Period	12/8/96 → 12/11/96

All Science Journal Classification (ASJC) codes

General Engineering

Cite this

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title = "Spectroscopic studies of low dimensional electron and hole systems in high quality GaAs-AlGaAs micro-structures",

abstract = "A highly sensitive photoconductivity (PC) technique has been applied to undoped GaAs-AlGaAs micro-structures with either a single interface or a single quantum well and a gate-controlled variable density of electrons or holes. In zero magnetic field measurements we have found a wide absorption band below the fundamental gap of bulk GaAs, which correlates with the population of 2D states. The PC technique has potential for spectroscopic studies of semiconductor nano-structures, such as quantum wire devices, which present difficulties for other conventional spectroscopy methods.",

author = "Stadnik, {V. A.} and Kane, {B. E.} and Clark, {R. G.} and Pfeiffer, {L. N.} and West, {K. W.}",

year = "1996",

language = "English (US)",

pages = "361--364",

note = "Proceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD ; Conference date: 08-12-1996 Through 11-12-1996",

}

Spectroscopic studies of low dimensional electron and hole systems in high quality GaAs-AlGaAs micro-structures. / Stadnik, V. A.; Kane, B. E.; Clark, R. G. et al.
1996. 361-364 Paper presented at Proceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD, Canberra, Aust.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Spectroscopic studies of low dimensional electron and hole systems in high quality GaAs-AlGaAs micro-structures

AU - Stadnik, V. A.

AU - Kane, B. E.

AU - Clark, R. G.

AU - Pfeiffer, L. N.

AU - West, K. W.

PY - 1996

Y1 - 1996

N2 - A highly sensitive photoconductivity (PC) technique has been applied to undoped GaAs-AlGaAs micro-structures with either a single interface or a single quantum well and a gate-controlled variable density of electrons or holes. In zero magnetic field measurements we have found a wide absorption band below the fundamental gap of bulk GaAs, which correlates with the population of 2D states. The PC technique has potential for spectroscopic studies of semiconductor nano-structures, such as quantum wire devices, which present difficulties for other conventional spectroscopy methods.

AB - A highly sensitive photoconductivity (PC) technique has been applied to undoped GaAs-AlGaAs micro-structures with either a single interface or a single quantum well and a gate-controlled variable density of electrons or holes. In zero magnetic field measurements we have found a wide absorption band below the fundamental gap of bulk GaAs, which correlates with the population of 2D states. The PC technique has potential for spectroscopic studies of semiconductor nano-structures, such as quantum wire devices, which present difficulties for other conventional spectroscopy methods.

UR - http://www.scopus.com/inward/record.url?scp=0030353664&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030353664&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0030353664

SP - 361

EP - 364

T2 - Proceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD

Y2 - 8 December 1996 through 11 December 1996

ER -

Spectroscopic studies of low dimensional electron and hole systems in high quality GaAs-AlGaAs micro-structures

Abstract

Conference

All Science Journal Classification (ASJC) codes

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