Spectroscopic studies of CdTe(111) bulk and surface electronic structure

Jie Ren; Li Fu; Guang Bian; Manhong Wong; Tao Wang; Gangqiang Zha; Wanqi Jie; T. Miller; M. Z. Hasan; T. C. Chiang

doi:10.1103/PhysRevB.91.235303

Spectroscopic studies of CdTe(111) bulk and surface electronic structure

Jie Ren, Li Fu, Guang Bian, Manhong Wong, Tao Wang, Gangqiang Zha, Wanqi Jie, T. Miller, M. Z. Hasan, T. C. Chiang

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11 Scopus citations

Abstract

Cadmium telluride (CdTe) is a direct band-gap semiconducting material with broad applications in optoelectronic devices. Here we report on a high-resolution angle-resolved photoemission (ARPES) study of CdTe(111) surfaces prepared by sputtering and annealing that show a (2×2) reconstruction as observed by electron diffraction. The ARPES maps along high-symmetry directions show prominent features with their intensities modulated by varying the incident photon energy, thus suggesting important matrix element effects associated with photoemission. The results are in excellent agreement with first-principles calculations of the bulk band structure and one-dimensional density of states. A prominent surface state is observed that exhibits a (2×2) periodicity in agreement with the symmetry of the surface reconstruction.

Original language	English (US)
Article number	235303
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	91
Issue number	23
DOIs	https://doi.org/10.1103/PhysRevB.91.235303
State	Published - Jun 1 2015

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1103/PhysRevB.91.235303

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title = "Spectroscopic studies of CdTe(111) bulk and surface electronic structure",

abstract = "Cadmium telluride (CdTe) is a direct band-gap semiconducting material with broad applications in optoelectronic devices. Here we report on a high-resolution angle-resolved photoemission (ARPES) study of CdTe(111) surfaces prepared by sputtering and annealing that show a (2×2) reconstruction as observed by electron diffraction. The ARPES maps along high-symmetry directions show prominent features with their intensities modulated by varying the incident photon energy, thus suggesting important matrix element effects associated with photoemission. The results are in excellent agreement with first-principles calculations of the bulk band structure and one-dimensional density of states. A prominent surface state is observed that exhibits a (2×2) periodicity in agreement with the symmetry of the surface reconstruction.",

author = "Jie Ren and Li Fu and Guang Bian and Manhong Wong and Tao Wang and Gangqiang Zha and Wanqi Jie and T. Miller and Hasan, {M. Z.} and Chiang, {T. C.}",

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T1 - Spectroscopic studies of CdTe(111) bulk and surface electronic structure

AU - Ren, Jie

AU - Fu, Li

AU - Bian, Guang

AU - Wong, Manhong

AU - Wang, Tao

AU - Zha, Gangqiang

AU - Jie, Wanqi

AU - Miller, T.

AU - Hasan, M. Z.

AU - Chiang, T. C.

PY - 2015/6/1

Y1 - 2015/6/1

N2 - Cadmium telluride (CdTe) is a direct band-gap semiconducting material with broad applications in optoelectronic devices. Here we report on a high-resolution angle-resolved photoemission (ARPES) study of CdTe(111) surfaces prepared by sputtering and annealing that show a (2×2) reconstruction as observed by electron diffraction. The ARPES maps along high-symmetry directions show prominent features with their intensities modulated by varying the incident photon energy, thus suggesting important matrix element effects associated with photoemission. The results are in excellent agreement with first-principles calculations of the bulk band structure and one-dimensional density of states. A prominent surface state is observed that exhibits a (2×2) periodicity in agreement with the symmetry of the surface reconstruction.

AB - Cadmium telluride (CdTe) is a direct band-gap semiconducting material with broad applications in optoelectronic devices. Here we report on a high-resolution angle-resolved photoemission (ARPES) study of CdTe(111) surfaces prepared by sputtering and annealing that show a (2×2) reconstruction as observed by electron diffraction. The ARPES maps along high-symmetry directions show prominent features with their intensities modulated by varying the incident photon energy, thus suggesting important matrix element effects associated with photoemission. The results are in excellent agreement with first-principles calculations of the bulk band structure and one-dimensional density of states. A prominent surface state is observed that exhibits a (2×2) periodicity in agreement with the symmetry of the surface reconstruction.

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Spectroscopic studies of CdTe(111) bulk and surface electronic structure

Abstract

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