Spatially selective single-grain silicon films induced by hydrogen plasma seeding

Xiang Zheng Bo, Nan Yao, Sigurd Wagner, J. C. Sturm

Research output: Contribution to journalConference article

2 Scopus citations

Abstract

The enhancement of a hydrogen plasma treatment on the solid-phase crystallization of hydrogenated amorphous silicon to form single crystalline silicon islands at designed locations was discussed. The amorphous silicon films within the holes were exposed to the hydrogen plasma to create microcrystalline seeds. The relationship between the size of holes and the number of grains in the holes after furnace annealing, was analyzed. The results showed that further annealing enlarged the grain size by lateral growth without an increase in the number of grains in the hole.

Original languageEnglish (US)
Pages (from-to)818-821
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume20
Issue number3
DOIs
StatePublished - May 1 2002
Event20th North American Conference on Molecular Beam Epitaxy - Providence, RI, United States
Duration: Oct 1 2001Oct 3 2001

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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