Spatially selective single-grain silicon films induced by hydrogen plasma seeding

Xiang Zheng Bo; Nan Yao; Sigurd Wagner; J. C. Sturm

doi:10.1116/1.1469016

Spatially selective single-grain silicon films induced by hydrogen plasma seeding

Xiang Zheng Bo, Nan Yao, Sigurd Wagner, J. C. Sturm

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

The enhancement of a hydrogen plasma treatment on the solid-phase crystallization of hydrogenated amorphous silicon to form single crystalline silicon islands at designed locations was discussed. The amorphous silicon films within the holes were exposed to the hydrogen plasma to create microcrystalline seeds. The relationship between the size of holes and the number of grains in the holes after furnace annealing, was analyzed. The results showed that further annealing enlarged the grain size by lateral growth without an increase in the number of grains in the hole.

Original language	English (US)
Pages (from-to)	818-821
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	20
Issue number	3
DOIs	https://doi.org/10.1116/1.1469016
State	Published - May 2002
Event	20th North American Conference on Molecular Beam Epitaxy - Providence, RI, United States Duration: Oct 1 2001 → Oct 3 2001

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1116/1.1469016

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title = "Spatially selective single-grain silicon films induced by hydrogen plasma seeding",

abstract = "The enhancement of a hydrogen plasma treatment on the solid-phase crystallization of hydrogenated amorphous silicon to form single crystalline silicon islands at designed locations was discussed. The amorphous silicon films within the holes were exposed to the hydrogen plasma to create microcrystalline seeds. The relationship between the size of holes and the number of grains in the holes after furnace annealing, was analyzed. The results showed that further annealing enlarged the grain size by lateral growth without an increase in the number of grains in the hole.",

author = "Bo, {Xiang Zheng} and Nan Yao and Sigurd Wagner and Sturm, {J. C.}",

year = "2002",

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AU - Bo, Xiang Zheng

AU - Yao, Nan

AU - Wagner, Sigurd

AU - Sturm, J. C.

PY - 2002/5

Y1 - 2002/5

N2 - The enhancement of a hydrogen plasma treatment on the solid-phase crystallization of hydrogenated amorphous silicon to form single crystalline silicon islands at designed locations was discussed. The amorphous silicon films within the holes were exposed to the hydrogen plasma to create microcrystalline seeds. The relationship between the size of holes and the number of grains in the holes after furnace annealing, was analyzed. The results showed that further annealing enlarged the grain size by lateral growth without an increase in the number of grains in the hole.

AB - The enhancement of a hydrogen plasma treatment on the solid-phase crystallization of hydrogenated amorphous silicon to form single crystalline silicon islands at designed locations was discussed. The amorphous silicon films within the holes were exposed to the hydrogen plasma to create microcrystalline seeds. The relationship between the size of holes and the number of grains in the holes after furnace annealing, was analyzed. The results showed that further annealing enlarged the grain size by lateral growth without an increase in the number of grains in the hole.

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DO - 10.1116/1.1469016

M3 - Conference article

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EP - 821

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

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T2 - 20th North American Conference on Molecular Beam Epitaxy

Y2 - 1 October 2001 through 3 October 2001

ER -

Spatially selective single-grain silicon films induced by hydrogen plasma seeding

Abstract

All Science Journal Classification (ASJC) codes

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