Spatial variation of the two-dimensional electron gas density induced by an increasing Hall electric field

I. Baskin, B. M. Ashkinadze, E. Cohen, V. V. Belkov, L. N. Pfeiffer, V. Umansky

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

The local properties of a high-mobility, two-dimensional electron gas (2DEG) subjected to an increasing Hall electric field are studied by imaging photoluminescence spectroscopy. It is observed that as the Hall electric field increases, the distribution of a 2DEG density across the sample becomes spatially nonuniform. This nonuniformity is associated with the "gating effect" of the Hall electric field that is screened by low-mobility charges accumulating in the layers parallel to the 2DEG. We consider two mechanisms to explain the 2DEG density redistribution induced by the Hall electric field. The first involves in-plane electron transport that results in a linear 2DEG density variation across the Hall bar. The second is activated at a high Hall voltage (>50 mV) and involves vertical electron tunneling out of the 2DEG layer. We conclude that the 2DEG density redistribution can affect the nonlinear magnetotransport phenomena recently studied in GaAs/Al xGa 1-xAs heterostructures containing a high-mobility 2DEG.

Original languageEnglish (US)
Article number245320
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume84
Issue number24
DOIs
StatePublished - Dec 28 2011
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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