Spatial structure of a single Mn impurity state on GaAs (110) surface

Dale Kitchen, Anthony Richardella, A. M. Yazdani

Research output: Contribution to journalArticle

19 Scopus citations

Abstract

Using a low temperature scanning tunneling microscope (STM), we have manipulated individual Mn adatoms at the GaAs (110) surface to apparently bond with two surface As atoms. In this configuration the Mn atoms, which either are at an interstitial site or have substituted for a surface Ga atom, give rise to strong in-gap levels as probed by spatially resolved STM spectroscopy measurements. Mapping the Mn-induced in-gap bound state shows an unusual spatial structure, with highly anisotropic character. The bound state shares some characteristic features with subsurface Mn and Zn dopants.

Original languageEnglish (US)
Pages (from-to)23-28
Number of pages6
JournalJournal of Superconductivity and Novel Magnetism
Volume18
Issue number1
DOIs
StatePublished - Dec 1 2005
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Keywords

  • GaAs
  • Impurity
  • Mn
  • Scanning Tunneling Microscopy (STM)

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