Abstract
Using a low temperature scanning tunneling microscope (STM), we have manipulated individual Mn adatoms at the GaAs (110) surface to apparently bond with two surface As atoms. In this configuration the Mn atoms, which either are at an interstitial site or have substituted for a surface Ga atom, give rise to strong in-gap levels as probed by spatially resolved STM spectroscopy measurements. Mapping the Mn-induced in-gap bound state shows an unusual spatial structure, with highly anisotropic character. The bound state shares some characteristic features with subsurface Mn and Zn dopants.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 23-28 |
| Number of pages | 6 |
| Journal | Journal of Superconductivity and Novel Magnetism |
| Volume | 18 |
| Issue number | 1 |
| DOIs | |
| State | Published - 2005 |
| Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
Keywords
- GaAs
- Impurity
- Mn
- Scanning Tunneling Microscopy (STM)