Solution-Processed p-Dopant as Interlayer in Polymer Solar Cells

F. Guillain, J. Endres, L. Bourgeois, Antoine Kahn, L. Vignau, G. Wantz

Research output: Contribution to journalArticle

14 Scopus citations

Abstract

We report here an original approach to dope the semiconducting polymer-metal interface in an inverted bulk-heterojunction (BHJ) organic solar cell. Solution-processed 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4-TCNQ), is deposited on top of a P3HT:PC61BM layer before deposition of the top electrode. Doping of P3HT by F4-TCNQ occurs after thermally induced diffusion at 100 °C of the latter into the BHJ. Diffusion and doping are evidenced by XPS and UV-vis-NIR absorption. XPS highlights the decrease in Fluorine concentration on top of the BHJ after annealing. In the same time, a charge transfer band attributed to doping is observed in the UV-vis-NIR absorption spectrum. Inverted polymer solar cells using solution-processed F4-TCNQ exhibit power conversion efficiency of nearly 3.5% after annealing. This simple and efficient approach, together with the low annealing temperature required to allow diffusion and doping, leads to standard efficiency P3HT:PC61BM polymer solar cells, which are suitable for printing on plastic flexible substrate.

Original languageEnglish (US)
Pages (from-to)9262-9267
Number of pages6
JournalACS Applied Materials and Interfaces
Volume8
Issue number14
DOIs
StatePublished - Apr 27 2016

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Keywords

  • F-TCNQ
  • doping
  • hole transport layer
  • polymer solar cells
  • solution-processing

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