TY - JOUR
T1 - Solution doping of organic semiconductors using air-stable n-dopants
AU - Qi, Yabing
AU - Mohapatra, Swagat K.
AU - Bok Kim, Sang
AU - Barlow, Stephen
AU - Marder, Seth R.
AU - Kahn, Antoine
N1 - Funding Information:
This material is based on work supported by Solvay S.A., the Office of Naval Research (N00014-11-1-0313), and the National Science Foundation (DMR-1005892 and through the Science and Technology Center Program, DMR-0120967).
PY - 2012/2/20
Y1 - 2012/2/20
N2 - Solution-based n-doping of the polymer poly{[N,N′-bis(2-octyldodecyl) -naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5′-(2, 2′-bithiophene)} [P(NDI 2OD-T 2)] and the small molecule 6,13-bis(tri(isopropyl)silylethynyl)pentacene (TIPS-pentacene) is realized with the air-stable dimers of rhodocene, [RhCp 2] 2, and ruthenium(pentamethylcyclopentdienyl)(1,3,5-triethylbenzene), [Cp*Ru(TEB)] 2. Fermi level shifts, measured by direct and inverse photoemission spectroscopy, and orders of magnitude increase in current density and film conductivity point to strong n-doping in both materials. The strong reducing power of these air-stable dopants is demonstrated through the n-doping of TIPS-pentacene, a material with low electron affinity (3.0 eV). Doping-induced reduction of the hopping transport activation energy indicates that the increase in film conductivity is due in part to the filling of deep gap states by carriers released by the dopants.
AB - Solution-based n-doping of the polymer poly{[N,N′-bis(2-octyldodecyl) -naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5′-(2, 2′-bithiophene)} [P(NDI 2OD-T 2)] and the small molecule 6,13-bis(tri(isopropyl)silylethynyl)pentacene (TIPS-pentacene) is realized with the air-stable dimers of rhodocene, [RhCp 2] 2, and ruthenium(pentamethylcyclopentdienyl)(1,3,5-triethylbenzene), [Cp*Ru(TEB)] 2. Fermi level shifts, measured by direct and inverse photoemission spectroscopy, and orders of magnitude increase in current density and film conductivity point to strong n-doping in both materials. The strong reducing power of these air-stable dopants is demonstrated through the n-doping of TIPS-pentacene, a material with low electron affinity (3.0 eV). Doping-induced reduction of the hopping transport activation energy indicates that the increase in film conductivity is due in part to the filling of deep gap states by carriers released by the dopants.
UR - http://www.scopus.com/inward/record.url?scp=84857777809&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84857777809&partnerID=8YFLogxK
U2 - 10.1063/1.3689760
DO - 10.1063/1.3689760
M3 - Article
AN - SCOPUS:84857777809
SN - 0003-6951
VL - 100
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 8
M1 - 083305
ER -