Sn-doped Bi 1.1 Sb 0.9 Te 2 S bulk crystal topological insulator with excellent properties

S. K. Kushwaha; I. Pletikosic; T. Liang; A. Gyenis; S. H. Lapidus; Yao Tian; He Zhao; K. S. Burch; Jingjing Lin; Wudi Wang; Huiwen Ji; A. V. Fedorov; Ali Yazdani; N. P. Ong; T. Valla; R. J. Cava

doi:10.1038/ncomms11456

Sn-doped Bi 1.1 Sb 0.9 Te 2 S bulk crystal topological insulator with excellent properties

S. K. Kushwaha, I. Pletikosic, T. Liang, A. Gyenis, S. H. Lapidus, Yao Tian, He Zhao, K. S. Burch, Jingjing Lin, Wudi Wang, Huiwen Ji, A. V. Fedorov, Ali Yazdani, N. P. Ong, T. Valla, R. J. Cava

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96 Scopus citations

Abstract

A long-standing issue in topological insulator research has been to find a bulk single crystal material that provides a high-quality platform for characterizing topological surface states without interference from bulk electronic states. This material would ideally be a bulk insulator, have a surface state Dirac point energy well isolated from the bulk valence and conduction bands, display quantum oscillations from the surface state electrons and be growable as large, high-quality bulk single crystals. Here we show that this material obstacle is overcome by bulk crystals of lightly Sn-doped Bi 1.1 Sb 0.9 Te 2 S grown by the vertical Bridgman method. We characterize Sn-BSTS via angle-resolved photoemission spectroscopy, scanning tunnelling microscopy, transport studies, X-ray diffraction and Raman scattering. We present this material as a high-quality topological insulator that can be reliably grown as bulk single crystals and thus studied by many researchers interested in topological surface states.

Original language	English (US)
Article number	11456
Journal	Nature communications
Volume	7
DOIs	https://doi.org/10.1038/ncomms11456
State	Published - Apr 27 2016

All Science Journal Classification (ASJC) codes

General Chemistry
General Biochemistry, Genetics and Molecular Biology
General Physics and Astronomy

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Kushwaha, S. K., Pletikosic, I., Liang, T., Gyenis, A., Lapidus, S. H., Tian, Y., Zhao, H., Burch, K. S., Lin, J., Wang, W., Ji, H., Fedorov, A. V., Yazdani, A., Ong, N. P., Valla, T., & Cava, R. J. (2016). Sn-doped Bi 1.1 Sb 0.9 Te 2 S bulk crystal topological insulator with excellent properties. Nature communications, 7, Article 11456. https://doi.org/10.1038/ncomms11456

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title = "Sn-doped Bi 1.1 Sb 0.9 Te 2 S bulk crystal topological insulator with excellent properties",

abstract = "A long-standing issue in topological insulator research has been to find a bulk single crystal material that provides a high-quality platform for characterizing topological surface states without interference from bulk electronic states. This material would ideally be a bulk insulator, have a surface state Dirac point energy well isolated from the bulk valence and conduction bands, display quantum oscillations from the surface state electrons and be growable as large, high-quality bulk single crystals. Here we show that this material obstacle is overcome by bulk crystals of lightly Sn-doped Bi 1.1 Sb 0.9 Te 2 S grown by the vertical Bridgman method. We characterize Sn-BSTS via angle-resolved photoemission spectroscopy, scanning tunnelling microscopy, transport studies, X-ray diffraction and Raman scattering. We present this material as a high-quality topological insulator that can be reliably grown as bulk single crystals and thus studied by many researchers interested in topological surface states.",

author = "Kushwaha, {S. K.} and I. Pletikosic and T. Liang and A. Gyenis and Lapidus, {S. H.} and Yao Tian and He Zhao and Burch, {K. S.} and Jingjing Lin and Wudi Wang and Huiwen Ji and Fedorov, {A. V.} and Ali Yazdani and Ong, {N. P.} and T. Valla and Cava, {R. J.}",

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AU - Kushwaha, S. K.

AU - Pletikosic, I.

AU - Liang, T.

AU - Gyenis, A.

AU - Lapidus, S. H.

AU - Tian, Yao

AU - Zhao, He

AU - Burch, K. S.

AU - Lin, Jingjing

AU - Wang, Wudi

AU - Ji, Huiwen

AU - Fedorov, A. V.

AU - Yazdani, Ali

AU - Ong, N. P.

AU - Valla, T.

AU - Cava, R. J.

PY - 2016/4/27

Y1 - 2016/4/27

N2 - A long-standing issue in topological insulator research has been to find a bulk single crystal material that provides a high-quality platform for characterizing topological surface states without interference from bulk electronic states. This material would ideally be a bulk insulator, have a surface state Dirac point energy well isolated from the bulk valence and conduction bands, display quantum oscillations from the surface state electrons and be growable as large, high-quality bulk single crystals. Here we show that this material obstacle is overcome by bulk crystals of lightly Sn-doped Bi 1.1 Sb 0.9 Te 2 S grown by the vertical Bridgman method. We characterize Sn-BSTS via angle-resolved photoemission spectroscopy, scanning tunnelling microscopy, transport studies, X-ray diffraction and Raman scattering. We present this material as a high-quality topological insulator that can be reliably grown as bulk single crystals and thus studied by many researchers interested in topological surface states.

AB - A long-standing issue in topological insulator research has been to find a bulk single crystal material that provides a high-quality platform for characterizing topological surface states without interference from bulk electronic states. This material would ideally be a bulk insulator, have a surface state Dirac point energy well isolated from the bulk valence and conduction bands, display quantum oscillations from the surface state electrons and be growable as large, high-quality bulk single crystals. Here we show that this material obstacle is overcome by bulk crystals of lightly Sn-doped Bi 1.1 Sb 0.9 Te 2 S grown by the vertical Bridgman method. We characterize Sn-BSTS via angle-resolved photoemission spectroscopy, scanning tunnelling microscopy, transport studies, X-ray diffraction and Raman scattering. We present this material as a high-quality topological insulator that can be reliably grown as bulk single crystals and thus studied by many researchers interested in topological surface states.

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Sn-doped Bi 1.1 Sb 0.9 Te 2 S bulk crystal topological insulator with excellent properties

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