Sn-doped Bi 1.1 Sb 0.9 Te 2 S bulk crystal topological insulator with excellent properties

S. K. Kushwaha, I. Pletikosic, T. Liang, A. Gyenis, S. H. Lapidus, Yao Tian, He Zhao, K. S. Burch, Jingjing Lin, Wudi Wang, Huiwen Ji, A. V. Fedorov, Ali Yazdani, N. P. Ong, T. Valla, R. J. Cava

Research output: Contribution to journalArticle

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Abstract

A long-standing issue in topological insulator research has been to find a bulk single crystal material that provides a high-quality platform for characterizing topological surface states without interference from bulk electronic states. This material would ideally be a bulk insulator, have a surface state Dirac point energy well isolated from the bulk valence and conduction bands, display quantum oscillations from the surface state electrons and be growable as large, high-quality bulk single crystals. Here we show that this material obstacle is overcome by bulk crystals of lightly Sn-doped Bi 1.1 Sb 0.9 Te 2 S grown by the vertical Bridgman method. We characterize Sn-BSTS via angle-resolved photoemission spectroscopy, scanning tunnelling microscopy, transport studies, X-ray diffraction and Raman scattering. We present this material as a high-quality topological insulator that can be reliably grown as bulk single crystals and thus studied by many researchers interested in topological surface states.

Original languageEnglish (US)
Article number11456
JournalNature communications
Volume7
DOIs
StatePublished - Apr 27 2016

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Biochemistry, Genetics and Molecular Biology(all)
  • Physics and Astronomy(all)

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    Kushwaha, S. K., Pletikosic, I., Liang, T., Gyenis, A., Lapidus, S. H., Tian, Y., Zhao, H., Burch, K. S., Lin, J., Wang, W., Ji, H., Fedorov, A. V., Yazdani, A., Ong, N. P., Valla, T., & Cava, R. J. (2016). Sn-doped Bi 1.1 Sb 0.9 Te 2 S bulk crystal topological insulator with excellent properties. Nature communications, 7, [11456]. https://doi.org/10.1038/ncomms11456