Site-Selective Quantum Control in an Isotopically Enriched Si 28 /Si0.7Ge0.3 Quadruple Quantum Dot

A. J. Sigillito, J. C. Loy, D. M. Zajac, M. J. Gullans, L. F. Edge, J. R. Petta

Research output: Contribution to journalArticle

12 Scopus citations

Abstract

Silicon spin qubits are a promising quantum-computing platform offering long coherence times, small device sizes, and compatibility with industry-backed device-fabrication techniques. In recent years, high-fidelity single-qubit and two-qubit operations have been demonstrated in Si. Here we demonstrate coherent spin control in a quadruple quantum dot fabricated from isotopically enriched Si28. We tune the ground-state charge configuration of the quadruple dot down to the single-electron regime and demonstrate tunable interdot tunnel couplings as large as 20 GHz, which enables exchange-based two-qubit gate operations. Site-selective single spin rotations are achieved with the use of electric dipole spin resonance in a magnetic field gradient. We execute a resonant controlled-not gate between two adjacent spins in 270 ns.

Original languageEnglish (US)
Article number061006
JournalPhysical Review Applied
Volume11
Issue number6
DOIs
StatePublished - Jun 26 2019

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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