Si/SiGe nanostructures fabricated by atomic force microscopy oxidation

Xiang Zheng Bo, Leonid P. Rokhinson, Haizhou Yin, D. C. Tsui, J. C. Sturm

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations


In this work, local AFM oxidation technique in a controlled humidity environment has been used to create small features in strained SiGe alloys. When directly oxidizing SiGe alloys, minimum line widths of 20nm were achieved by adjusting parameters such as the bias voltage on the microscope tip and the tip writing speed. It was found that when bias voltage increases, and/or when the tip writing speed decreases, the oxidation height of silicon-germanium increases. In contrast to conventional thermal oxidation, the oxide height on SiGe alloys is slightly less than that on Si. Finally, this method was used to successfully cut conducting SiGe quantum well lines with high resolution.

Original languageEnglish (US)
Pages (from-to)173-178
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
StatePublished - 2002
EventMaterials Issues in Novel Si-Based Technology - Boston, MA, United States
Duration: Nov 26 2001Nov 28 2001

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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