Si/Si1-x-yGexCy/Si heterojunction bipolar transistors

L. D. Lanzerotti, A. St. Amour, C. W. Liu, J. C. Sturm, J. K. Watanabe, N. D. Theodore

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In this letter, we report the first Si/Si1-x-y GexCy/Si n-p-n heterojunction bipolar transistors and the first electrical bandgap measurements of strained Si1-x-yGexCy on Si (100) substrates. The carbon compositions were measured by the shift between the Si1-x-y Gex Cy and Si1-xGex X-ray diffraction peaks. The temperature dependence of the HBT collector current demonstrates that carbon causes a shift in bandgap of +26 me V/%C for germanium fractions of x = 0.2 and x = 0.25. These results show that carbon reduces the strain in Si1-xGex at a faster rate than it increases the bandgap (compared to reducing x in Si1-x Gex), so that a Si1-x-yGexCy film will have less strain than a Si1-xGex film with the same bandgap.

Original languageEnglish (US)
Pages (from-to)334-337
Number of pages4
JournalIEEE Electron Device Letters
Issue number7
StatePublished - Jul 1 1996

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Lanzerotti, L. D., St. Amour, A., Liu, C. W., Sturm, J. C., Watanabe, J. K., & Theodore, N. D. (1996). Si/Si1-x-yGexCy/Si heterojunction bipolar transistors. IEEE Electron Device Letters, 17(7), 334-337.