In this letter, we report the first Si/Si1-x-y GexCy/Si n-p-n heterojunction bipolar transistors and the first electrical bandgap measurements of strained Si1-x-yGexCy on Si (100) substrates. The carbon compositions were measured by the shift between the Si1-x-y Gex Cy and Si1-xGex X-ray diffraction peaks. The temperature dependence of the HBT collector current demonstrates that carbon causes a shift in bandgap of +26 me V/%C for germanium fractions of x = 0.2 and x = 0.25. These results show that carbon reduces the strain in Si1-xGex at a faster rate than it increases the bandgap (compared to reducing x in Si1-x Gex), so that a Si1-x-yGexCy film will have less strain than a Si1-xGex film with the same bandgap.
|Original language||English (US)|
|Number of pages||4|
|Journal||IEEE Electron Device Letters|
|State||Published - Jul 1996|
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering