Si/Si1-x-yGexCy/Si heterojunction bipolar transistors

L. D. Lanzerotti; A. St. Amour; C. W. Liu; J. C. Sturm; J. K. Watanabe; N. D. Theodore

doi:10.1109/55.506359

Si/Si_1-x-yGe_xC_y/Si heterojunction bipolar transistors

L. D. Lanzerotti, A. St. Amour, C. W. Liu, J. C. Sturm, J. K. Watanabe, N. D. Theodore

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Abstract

In this letter, we report the first Si/Si_1-x-y Ge_xC_y/Si n-p-n heterojunction bipolar transistors and the first electrical bandgap measurements of strained Si_1-x-yGe_xC_y on Si (100) substrates. The carbon compositions were measured by the shift between the Si_1-x-y Ge_x C_y and Si_1-xGe_x X-ray diffraction peaks. The temperature dependence of the HBT collector current demonstrates that carbon causes a shift in bandgap of +26 me V/%C for germanium fractions of x = 0.2 and x = 0.25. These results show that carbon reduces the strain in Si_1-xGe_x at a faster rate than it increases the bandgap (compared to reducing x in Si_1-x Ge_x), so that a Si_1-x-yGe_xC_y film will have less strain than a Si_1-xGe_x film with the same bandgap.

Original language	English (US)
Pages (from-to)	334-337
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	17
Issue number	7
DOIs	https://doi.org/10.1109/55.506359
State	Published - Jul 1996

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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title = "Si/Si1-x-yGexCy/Si heterojunction bipolar transistors",

abstract = "In this letter, we report the first Si/Si1-x-y GexCy/Si n-p-n heterojunction bipolar transistors and the first electrical bandgap measurements of strained Si1-x-yGexCy on Si (100) substrates. The carbon compositions were measured by the shift between the Si1-x-y Gex Cy and Si1-xGex X-ray diffraction peaks. The temperature dependence of the HBT collector current demonstrates that carbon causes a shift in bandgap of +26 me V/%C for germanium fractions of x = 0.2 and x = 0.25. These results show that carbon reduces the strain in Si1-xGex at a faster rate than it increases the bandgap (compared to reducing x in Si1-x Gex), so that a Si1-x-yGexCy film will have less strain than a Si1-xGex film with the same bandgap.",

author = "Lanzerotti, {L. D.} and {St. Amour}, A. and Liu, {C. W.} and Sturm, {J. C.} and Watanabe, {J. K.} and Theodore, {N. D.}",

note = "Funding Information: Manuscript received October 18, 1995. This work was supported by ONR under Grant N00014-90-5-1316 and NSF under Grant ECS92-03109. L. D. Lanzerotti, A. St. Amour, C. W. Liu, and J. C. Sturm are with Department of Electrical Engineering, Princeton University, Princeton, NJ 08544 USA. C. W. Liu is also with Department of Electrical Engineering, National Chunghsing University, Taichung 40227, Taiwan. J. K. Watanabe and N. D. Theodore are with Materials Research and Strategic Technologies, Motorola, Inc., Mesa, AZ 85202 USA. Publisher Item Identifier S 0741-3 106(96)053 11-6.",

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T1 - Si/Si1-x-yGexCy/Si heterojunction bipolar transistors

AU - Lanzerotti, L. D.

AU - St. Amour, A.

AU - Liu, C. W.

AU - Sturm, J. C.

AU - Watanabe, J. K.

AU - Theodore, N. D.

N1 - Funding Information: Manuscript received October 18, 1995. This work was supported by ONR under Grant N00014-90-5-1316 and NSF under Grant ECS92-03109. L. D. Lanzerotti, A. St. Amour, C. W. Liu, and J. C. Sturm are with Department of Electrical Engineering, Princeton University, Princeton, NJ 08544 USA. C. W. Liu is also with Department of Electrical Engineering, National Chunghsing University, Taichung 40227, Taiwan. J. K. Watanabe and N. D. Theodore are with Materials Research and Strategic Technologies, Motorola, Inc., Mesa, AZ 85202 USA. Publisher Item Identifier S 0741-3 106(96)053 11-6.

PY - 1996/7

Y1 - 1996/7

N2 - In this letter, we report the first Si/Si1-x-y GexCy/Si n-p-n heterojunction bipolar transistors and the first electrical bandgap measurements of strained Si1-x-yGexCy on Si (100) substrates. The carbon compositions were measured by the shift between the Si1-x-y Gex Cy and Si1-xGex X-ray diffraction peaks. The temperature dependence of the HBT collector current demonstrates that carbon causes a shift in bandgap of +26 me V/%C for germanium fractions of x = 0.2 and x = 0.25. These results show that carbon reduces the strain in Si1-xGex at a faster rate than it increases the bandgap (compared to reducing x in Si1-x Gex), so that a Si1-x-yGexCy film will have less strain than a Si1-xGex film with the same bandgap.

AB - In this letter, we report the first Si/Si1-x-y GexCy/Si n-p-n heterojunction bipolar transistors and the first electrical bandgap measurements of strained Si1-x-yGexCy on Si (100) substrates. The carbon compositions were measured by the shift between the Si1-x-y Gex Cy and Si1-xGex X-ray diffraction peaks. The temperature dependence of the HBT collector current demonstrates that carbon causes a shift in bandgap of +26 me V/%C for germanium fractions of x = 0.2 and x = 0.25. These results show that carbon reduces the strain in Si1-xGex at a faster rate than it increases the bandgap (compared to reducing x in Si1-x Gex), so that a Si1-x-yGexCy film will have less strain than a Si1-xGex film with the same bandgap.

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Si/Si_1-x-yGe_xC_y/Si heterojunction bipolar transistors

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