Abstract
Strong magnetic field gradients can produce a synthetic spin-orbit interaction that allows high-fidelity electrical control of single electron spins. We investigate how a field gradient impacts the spin relaxation time T1 by measuring T1 as a function of the magnetic field B in silicon. The interplay of charge noise, magnetic field gradients, phonons, and conduction-band valleys leads to a maximum relaxation time of 160ms at low fields, a strong spin-valley relaxation hotspot at intermediate fields, and a B4 scaling at high fields. T1 is found to decrease with increasing lattice temperature as well as with added electrical noise. In comparison, samples without micromagnets have a significantly greater T1.
Original language | English (US) |
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Article number | 044063 |
Journal | Physical Review Applied |
Volume | 11 |
Issue number | 4 |
DOIs | |
State | Published - Apr 19 2019 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)